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Journal of Electronic Materials

, Volume 37, Issue 12, pp 1774–1779 | Cite as

Optical Properties of Dilute Nitride InN(As)Sb Quantum Wells and Quantum Dots Grown by Molecular Beam Epitaxy

  • S.M. KimEmail author
  • H.B. Yuen
  • F. Hatami
  • A. Chin
  • J.S. Harris
Article

Abstract

We report the growth and characterization of a new dilute nitride infrared material: InN(As)Sb. InNAsSb single quantum wells (SQWs) and InNSb self-assembled quantum dots (QDs) were grown on both InAs and GaAs substrates by solid-source molecular beam epitaxy. High-quality InNAsSb epilayers were realized by optimizing the nitrogen incorporation growth conditions. Both secondary-ion mass spectroscopy and x-ray diffraction measurements confirmed a nitrogen incorporation of 1%. Temperature- and power-dependent photoluminescence measurements were conducted and revealed a luminescence emission at 4.03 μm from localized states and ∼4.3 μm from the ground-state transition in InNAsSb SQWs. InNSb QDs exhibited a 10 K photoluminescence peak at 3.6 μm.

Keywords

Infrared narrow bandgap quantum dots quantum wells molecular beam epitaxy 

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Copyright information

© TMS 2008

Authors and Affiliations

  • S.M. Kim
    • 1
    • 2
    Email author
  • H.B. Yuen
    • 1
  • F. Hatami
    • 1
  • A. Chin
    • 3
  • J.S. Harris
    • 1
  1. 1.Solid State and Photonics Laboratory, Department of Electrical EngineeringStanford UniversityStanfordUSA
  2. 2.Department of Electrical and Computer EngineeringThe University of AlabamaTuscaloosaUSA
  3. 3.NASA Ames Research CenterMoffett FieldUSA

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