Vapor-Phase Growth of Bulk Crystals of Cadmium Telluride and Cadmium Zinc Telluride on Gallium Arsenide Seeds
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The growth of large-area bulk crystals of cadmium telluride and cadmium zinc telluride has been demonstrated using the combination of a novel physical vapor transport growth system and heteroepitaxial seeding on GaAs wafers. X-ray diffraction studies show the resulting material to be of extremely high quality despite the large lattice mismatch between the seed and the grown crystal. This process should provide a reliable growth route for large-area large-volume single-crystal boules of cadmium telluride and cadmium zinc telluride.
KeywordsCadmium telluride cadmium zinc telluride bulk growth vapor growth heteroepitaxy
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- 4.E.V. Markov, A.A. Davydov, Inorg. Mater. 11, 1504 (1975)Google Scholar
- 6.D.K. Bowen and B.K. Tanner, X-ray Metrology in Semiconductor Manufacturing, Taylor and Francis (Boca Raton: CRC Press, 2006), 279pp + xiGoogle Scholar
- 8.A.N. Pikhtin, A.D. Yas’kov, Sov. Phys. Semicond. 22, 613 (1988)Google Scholar