Vapor-Phase Growth of Bulk Crystals of Cadmium Telluride and Cadmium Zinc Telluride on Gallium Arsenide Seeds
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The growth of large-area bulk crystals of cadmium telluride and cadmium zinc telluride has been demonstrated using the combination of a novel physical vapor transport growth system and heteroepitaxial seeding on GaAs wafers. X-ray diffraction studies show the resulting material to be of extremely high quality despite the large lattice mismatch between the seed and the grown crystal. This process should provide a reliable growth route for large-area large-volume single-crystal boules of cadmium telluride and cadmium zinc telluride.
KeywordsCadmium telluride cadmium zinc telluride bulk growth vapor growth heteroepitaxy
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