Journal of Electronic Materials

, Volume 37, Issue 5, pp 611–615 | Cite as

Optical Hall Effect in Hexagonal InN

  • T. Hofmann
  • V. Darakchieva
  • B. Monemar
  • H. Lu
  • W.J. Schaff
  • M. Schubert


Measurements of the optical Hall effect in naturally doped high-quality wurtzite-structure InN thin films by generalized ellipsometry reveal that both the surface and the interior (bulk) free electron densities decrease with power-law dependencies on the film thickness. We discover a significant deviation between the bulk electron and dislocation densities. This difference is attributed here to the existence of surface defects with activation mechanism different from bulk dislocations and identifies the possible origin of the so far persistent natural n-type conductivity in InN. We further quantify the anisotropy of the \(\Upgamma\)-point effective mass.


InN electronic properties electron effective mass infrared and THz magneto-optic ellipsometry 


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M.S. acknowledges startup funds from the College of Engineering at University of Nebraska–Lincoln, support from the J.A. Woollam Foundation, and the National Science Foundation in MRSEC QSPIN. T.H. and M.S. also thank Craig M. Herzinger with J.A. Woollam Co., Inc. for many fruitful discussions.


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Copyright information

© TMS 2008

Authors and Affiliations

  • T. Hofmann
    • 1
  • V. Darakchieva
    • 2
  • B. Monemar
    • 2
  • H. Lu
    • 3
  • W.J. Schaff
    • 3
  • M. Schubert
    • 1
  1. 1.Department of Electrical Engineering and Nebraska Center for Materials and NanoscienceUniversity of Nebraska-LincolnNebraskaUSA
  2. 2.Department of Physics, Chemistry and BiologyLinköping UniversityLinkopingSweden
  3. 3.Department of Electrical and Computer EngineeringCornell UniversityIthacaUSA

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