Journal of Electronic Materials

, Volume 37, Issue 5, pp 611–615 | Cite as

Optical Hall Effect in Hexagonal InN

  • T. Hofmann
  • V. Darakchieva
  • B. Monemar
  • H. Lu
  • W.J. Schaff
  • M. Schubert
Article

Abstract

Measurements of the optical Hall effect in naturally doped high-quality wurtzite-structure InN thin films by generalized ellipsometry reveal that both the surface and the interior (bulk) free electron densities decrease with power-law dependencies on the film thickness. We discover a significant deviation between the bulk electron and dislocation densities. This difference is attributed here to the existence of surface defects with activation mechanism different from bulk dislocations and identifies the possible origin of the so far persistent natural n-type conductivity in InN. We further quantify the anisotropy of the \(\Upgamma\)-point effective mass.

Keywords

InN electronic properties electron effective mass infrared and THz magneto-optic ellipsometry 

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Notes

Acknowledgements

M.S. acknowledges startup funds from the College of Engineering at University of Nebraska–Lincoln, support from the J.A. Woollam Foundation, and the National Science Foundation in MRSEC QSPIN. T.H. and M.S. also thank Craig M. Herzinger with J.A. Woollam Co., Inc. for many fruitful discussions.

References

  1. 1.
    Lu H., Schaff WJ., Hwang J., Wu H., Yeo W., Pharkya A., Eastman L.F. (2000) Appl. Phys. Lett. 77:2548CrossRefGoogle Scholar
  2. 2.
    Swartz C.H., Tomkins R.P., Myers T.H., Lu H., Schaff W.J. (2005) phys. stat. sol. (c) 2:2250CrossRefGoogle Scholar
  3. 3.
    Gallinat C.S., Koblmüller G., Brown J.S., Bernardis S., Speck J.S., Chern G.D., Readinger E.D., Shen H., Wraback M. (2006) Appl. Phys. Lett. 89:032109CrossRefGoogle Scholar
  4. 4.
    Cimalla V., Lebedev V., Morales F.M., Goldhahn R., Ambacher O. (2006) Appl. Phys. Lett. 89,172109CrossRefGoogle Scholar
  5. 5.
    D.C. Look, H. Lu, W.J. Schaff, J. Jasinski, and Z. Liliental-Weber, Appl. Phys. Lett. 80, 258 (2002). ISSN 00036951.Google Scholar
  6. 6.
    Mahboob I., Veal T.D., McConville C.F., Lu H., Schaff W.J. (2004) Phys. Rev. Lett. 92:036804CrossRefGoogle Scholar
  7. 7.
    Chen F., Cartwright A.N., Lu H., Schaff W.J. (2004) J. Crystal Growth 269:10CrossRefGoogle Scholar
  8. 8.
    Lebedev V., Cimalla V., Baumann T., Ambacher O., Morales F., Lozano J., Gonzalez D. (2006) J. Appl. Phys. 100:94903CrossRefGoogle Scholar
  9. 9.
    Piper L.F.J., Veal T.D., McConville C.F., Lu H., Schaff W.J. (2006) Appl. Phys. Lett. 88:252109CrossRefGoogle Scholar
  10. 10.
    Lu H., Schaff W., Eastman L., Stutz C. (2003) Appl Phys Lett 82:1736CrossRefGoogle Scholar
  11. 11.
    Swartz C., Tompkins R., Giles N., Myers T., Lu H., Schaff W., Eastman L. (2004) J. of Crystal Growth 269:29CrossRefGoogle Scholar
  12. 12.
    Arnaudov B., Paskova T., Evtimova S., Monemar B., Lu H., Schaff W.J. (2006) phys. stat. sol. (a) 203:1681CrossRefGoogle Scholar
  13. 13.
    Hofmann T., Schade U., Eberhardt W., Herzinger C., Esquinazi P., Schubert M. (2006) Rev. Sci. Inst. 77:63902CrossRefGoogle Scholar
  14. 14.
    Hofmann T., Schubert M., Herzinger C.M., Pietzonka I. (2003) Appl. Phys. Lett. 82:3463CrossRefGoogle Scholar
  15. 15.
    M. Schubert, Infrared Ellipsometry on Semiconductor Layer Structures: Phonons, Plasmons and Polaritons, vol.␣209 of Springer Tracts in Modern Physics (Berlin: Springer, 2004).Google Scholar
  16. 16.
    Schubert M., Hofmann T., Herzinger C.M. (2003) J. Opt. Soc. Am. A 20:347CrossRefGoogle Scholar
  17. 17.
    Lu H., Schaff W.J., Hwang J., Wu H., Koley G., Eastman L.F. (2001) Appl. Phys. Lett. 79: 1489CrossRefGoogle Scholar
  18. 18.
    Jellison G.E. (1998) Thin Solid Films 313-314:33CrossRefGoogle Scholar
  19. 19.
    Darakchieva V., Paskov P.P., Valcheva E., Paskova T., Monemar B., Schubert M., Lu H., Schaff W.J. (2004) Appl. Phys. Lett. 84:3636CrossRefGoogle Scholar
  20. 20.
    C. Pidgeon, Handbook on Semiconductors, ed. M. Balkanski (North-Holland, Amsterdam, 1980).Google Scholar
  21. 21.
    Schubert M., Hofmann T., Šik J. (2005) Phys. Rev. B 71:35324CrossRefGoogle Scholar
  22. 22.
    Kasic A., Schubert M., Einfeldt S., Hommel D., Tiwald T.E. (2000) Phys. Rev. B 62:7365CrossRefGoogle Scholar
  23. 23.
    Carrier P., Wei S.-H. (2005) J. Appl. Phys. 97:33707CrossRefGoogle Scholar
  24. 24.
    Rinke P., Scheffler M., Qteish A., Winkelnkemper M., Bimberg D., Neugebauer J. (2006) Appl. Phys. Lett. 89:161919CrossRefGoogle Scholar
  25. 25.
    Inushima T., Higashiwaki M., Matsui T., Takenobu T., Motokawa M. (2005) Phys. Rev. B 72:85210CrossRefGoogle Scholar
  26. 26.
    Fu S., Chen Y. (2004) Appl. Phys. Lett. 85:1523CrossRefGoogle Scholar
  27. 27.
    Wu J., Walukiewicz W., Yu K.M., Ager J.W., Haller E.E., Lu H., Schaff W.J., Saito Y., Nanishi Y. (2002) Appl. Phys. Lett. 80:3967CrossRefGoogle Scholar
  28. 28.
    Kasic A., Schubert M., Saito Y., Nanishi Y., Wagner G. (2002) Phys. Rev. B 65:115206CrossRefGoogle Scholar
  29. 29.
    Lu H., Schaff W.J., Eastman L.F., Wu J., Walukiewicz W., Cimalla V., Ambacher O. (2003b) Appl. Phys. Lett. 83:1136CrossRefGoogle Scholar
  30. 30.
    Piper L., Veal T., Mahboob I., McConville C., Lu H., Schaff W. (2004) Phys. Rev. B 70:115333CrossRefGoogle Scholar
  31. 31.
    R. Jones, H. van Genuchten, S. Li, L. Hsu, K. Yu, W. Walukiewicz, J.W. Ager, E. Haller, H. Lu, W. Schaff et al., Mat. Res. Soc. Symp. Proc. 892, 105 (2006), ISSN 1 55899 846 2.Google Scholar
  32. 32.
    Mahboob I., Veal T.D., Piper L.F.J., McConville C.F., Lu H., Schaff W.J., Furthmüller J., Bechstedt F. (2004b) Phys. Rev. B 69:201307CrossRefGoogle Scholar
  33. 33.
    Li S.X., Yu K.M., Wu J., Jones R.E., Walukiewicz W., Ager J.W. III, Shan W., Haller E.E., Lu H. et al. (2005) Phys. Rev. B 71:161201CrossRefGoogle Scholar

Copyright information

© TMS 2008

Authors and Affiliations

  • T. Hofmann
    • 1
  • V. Darakchieva
    • 2
  • B. Monemar
    • 2
  • H. Lu
    • 3
  • W.J. Schaff
    • 3
  • M. Schubert
    • 1
  1. 1.Department of Electrical Engineering and Nebraska Center for Materials and NanoscienceUniversity of Nebraska-LincolnNebraskaUSA
  2. 2.Department of Physics, Chemistry and BiologyLinköping UniversityLinkopingSweden
  3. 3.Department of Electrical and Computer EngineeringCornell UniversityIthacaUSA

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