Journal of Electronic Materials

, Volume 37, Issue 5, pp 736–742

Growth of Polarity-Controlled ZnO Films on (0001) Al2O3

  • J.S. Park
  • J.H. Chang
  • T. Minegishi
  • H.J. Lee
  • S.H. Park
  • I.H. Im
  • T. Hanada
  • S.K. Hong
  • M.W. Cho
  • T. Yao
Open Access
Article

Abstract

The polarity control of ZnO films grown on (0001) Al2O3 substrates by plasma-assisted molecular-beam epitaxy (P-MBE) was achieved by using a novel CrN buffer layer. Zn-polar ZnO films were obtained by using a Zn-terminated CrN buffer layer, while O-polar ZnO films were achieved by using a Cr2O3 layer formed by O-plasma exposure of a CrN layer. The mechanism of polarity control was proposed. Optical and structural quality of ZnO films was characterized by high-resolution X-ray diffraction and photoluminescence (PL) spectroscopy. Low-temperature PL spectra of Zn-polar and O-polar samples show dominant bound exciton (I8) and strong free exciton emissions. Finally, one-dimensional periodic structures consisting of Zn-polar and O-polar ZnO films were simultaneously grown on the same substrate. The periodic inversion of polarity was confirmed in terms of growth rate, surface morphology, and piezo response microscopy (PRM) measurement.

Keywords

Polarity PPZnO interface ZnO nitrides buffer layers 

Copyright information

© TMS 2007

Authors and Affiliations

  • J.S. Park
    • 1
  • J.H. Chang
    • 2
  • T. Minegishi
    • 1
  • H.J. Lee
    • 1
  • S.H. Park
    • 1
  • I.H. Im
    • 1
  • T. Hanada
    • 1
  • S.K. Hong
    • 3
  • M.W. Cho
    • 1
    • 4
  • T. Yao
    • 1
    • 4
  1. 1.Institute for Materials ResearchTohoku UniversitySendaiJapan
  2. 2.Major of Semiconductor PhysicsKorea Maritime UniversityPusanRepublic of Korea
  3. 3.Department of Nano Information Systems EngineeringChungnam National UniversityDaejeonRepublic of Korea
  4. 4.Center for Interdisciplinary ResearchTohoku UniversitySendaiJapan

Personalised recommendations