Journal of Electronic Materials

, Volume 37, Issue 5, pp 736–742 | Cite as

Growth of Polarity-Controlled ZnO Films on (0001) Al2O3

  • J.S. Park
  • J.H. Chang
  • T. Minegishi
  • H.J. Lee
  • S.H. Park
  • I.H. Im
  • T. Hanada
  • S.K. Hong
  • M.W. Cho
  • T. Yao
Open Access
Article

Abstract

The polarity control of ZnO films grown on (0001) Al2O3 substrates by plasma-assisted molecular-beam epitaxy (P-MBE) was achieved by using a novel CrN buffer layer. Zn-polar ZnO films were obtained by using a Zn-terminated CrN buffer layer, while O-polar ZnO films were achieved by using a Cr2O3 layer formed by O-plasma exposure of a CrN layer. The mechanism of polarity control was proposed. Optical and structural quality of ZnO films was characterized by high-resolution X-ray diffraction and photoluminescence (PL) spectroscopy. Low-temperature PL spectra of Zn-polar and O-polar samples show dominant bound exciton (I8) and strong free exciton emissions. Finally, one-dimensional periodic structures consisting of Zn-polar and O-polar ZnO films were simultaneously grown on the same substrate. The periodic inversion of polarity was confirmed in terms of growth rate, surface morphology, and piezo response microscopy (PRM) measurement.

Keywords

Polarity PPZnO interface ZnO nitrides buffer layers 

Notes

Acknowledgements

J.S. Park appreciates the financial support for a Research Fellowship and a Grant-in-Aid from the Japan Society for the Promotion of Science (JSPS). S.K. Hong gratefully acknowledges support by a Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2005-205-D00078).

References

  1. 1.
    D.M. Bagnall, Y.F. Chen, Z. Zhu, S. Koyama, M.Y. Shen, T. Goto, and T. Yao, Appl. Phys. Lett. 70, 2230 (1997)CrossRefGoogle Scholar
  2. 2.
    S.A. Chevtchenko, J.C. Moore, U. Ozgur, X. Gu, A.A. Baski, H. Morkoc, B. Nemeth, and J.E. Nause, Appl. Phys. Lett. 89, 182111 (2006)CrossRefGoogle Scholar
  3. 3.
    S.K. Hong, T. Hanada, H.J. Ko, Y. Chen, D. Imai, K. Araki, M. Shinohara, K. Saitoh, M. Terauchi, and T. Yao, Phys. Rev. B 65, 115331 (2002)CrossRefGoogle Scholar
  4. 4.
    J. Cai, and F.A. Ponce, J. Appl. Phys. 91, 9856 (2002)CrossRefGoogle Scholar
  5. 5.
    H. Tampo, H. Shibat, K. Matsubara, A. Yamada, P. Fons, S. Niki, M. Yamagata, and H. Kanie, Appl. Phys. Lett. 89, 132113 (2006)CrossRefGoogle Scholar
  6. 6.
    H. Kato, K. Miyamoto, M. Sano, and T. Yao, Appl. Phys. Lett. 84, 4562 (2004)CrossRefGoogle Scholar
  7. 7.
    Y. Wang, X.L. Du, Z.X. Mei, Z.Q. Zeng, M.J. Ying, H.T. Yuan, J.F. Jia, Q.K. Xue, and Z. Zhang, Appl. Phys. Lett. 87, 051901 (2005)CrossRefGoogle Scholar
  8. 8.
    T. Minegishi, J.H. Yoo, H. Suzuki, Z. Vashaei, K. Inaba, K.S. Shim, and T. Yao, J. Vac. Sci. Technol. B 23, 1286 (2005)CrossRefGoogle Scholar
  9. 9.
    S. Zhu, H. Zhu, and N. Ming, Science 279, 843–846 (1997)CrossRefGoogle Scholar
  10. 10.
    A. Bruner, P. Shaier, and D. Eger, Opt. Express 14, 9371 (2006)CrossRefGoogle Scholar
  11. 11.
    J.S. Park, S.K. Hong, T. Minegishi, S.H. Park, I.H. Im, T. Hanada, M.W. Cho, and T. Yao, Appl. Phys. Lett. 90, 201907 (2007)CrossRefGoogle Scholar
  12. 12.
    S.K. Hong, T. Hananda, Y. Chen, H.J. Ko, T. Yao, D. Imai, K. Araki, and M. Shinohara, Appl. Surf. Sci. 190, 491 (2002)CrossRefGoogle Scholar
  13. 13.
    H.J. Ko, T. Yao, Y. Chen, and S.K. Hong, J. Appl. Phys. 92, 4354 (2002)CrossRefGoogle Scholar
  14. 14.
    J. Narayan, and B.C. Larson, J. Appl. Phys. 93, 278 (2003)CrossRefGoogle Scholar
  15. 15.
    A.N. Mariano, and R.E. Hanneman, J. Appl. Phys. 34, 384 (1963)CrossRefGoogle Scholar
  16. 16.
    D. Zhuang, J.H. Edgar, Mater. Sci. Eng. R-Rep. 48, 1 (2005)CrossRefGoogle Scholar
  17. 17.
    A.R. Smith, R.M. Feenstra, D.W. Greve, M.-S. Shin, M. Skowronski, J. Neugebauer, and J.E. Northrup, Appl. Phys. Lett. 72, 2114 (1998)CrossRefGoogle Scholar
  18. 18.
    X. Wang, Y. Tomita, O.H. Roh, M. Ohsugi, S.B. Che, T. Ishtani, and A. Yoshikawa, Appl. Phys. Lett. 86, 011921 (2005)CrossRefGoogle Scholar
  19. 19.
    H. Tampo, P. Fons, A. Yamada, K.K. Kim, H. Shibata, K. Matsubara, S. Niki, H. Yoshikawa, and H. Kanie, Appl. Phys. Lett. 87, 141904 (2005)CrossRefGoogle Scholar
  20. 20.
    H. Kato, M. Sano, K. Miyamoto, and T. Yao, J. Cryst. Growth 265, 375 (2004)CrossRefGoogle Scholar
  21. 21.
    X.G. Wang, and J.R. Smith, Phys. Rev. B 68, 201402 (2003)CrossRefGoogle Scholar
  22. 22.
    C. Rehbein, N.M. Harrison, and A. Wander, Phys. Rev. B 54, 14066 (1996)CrossRefGoogle Scholar
  23. 23.
    Z.X. Mei, Y. Wang, X.L. Du, M.J. Ying, Z.Q. Zeng, H. Zheng, J.F. Jia, Q.K. Xue, and Z. Zhang, J. Appl. Phys. 96, 7108 (2004)CrossRefGoogle Scholar
  24. 24.
    G. Bauer, and W. Richer, Optical Characterization of Epitaxial Semiconductor Layers (Springer, Berlin, 1983), Chapter 6Google Scholar
  25. 25.
    H. Kato, M. Sano, K. Miyamoto, T. Yao, J. Cryst. Growth 275, 2459 (2005)CrossRefGoogle Scholar
  26. 26.
    K. Thonke, Th. Gruber, N. Teofilov, R. Schonfelder, A. Waag, and R. Sauer, Phys. B 308–310, 945 (2001)CrossRefGoogle Scholar
  27. 27.
    P.J. Dean, Phys. Stat. Sol. (a) 81, 625 (1984)CrossRefGoogle Scholar
  28. 28.
    B.K. Meyer, H. Alves, D.M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Straβburg, M. Dworzak, U. Haboeck, and A.V. Rodina, Phys. Stat. Sol. (b) 241, 231 (2004)CrossRefGoogle Scholar
  29. 29.
    A. Teke, U. Ozgur, S. Dogan, X. Gu, H. Morkoc, B. Nemeth, J. Nause, and H.O. Everitt, Phys. Rev. B 70, 195207 (2004)CrossRefGoogle Scholar
  30. 30.
    B.J. Rodriguez, A. Gruverman, A.I. Kingon, and R.J. Nemanich, and O. Ambacher, Appl. Phys. Lett. 80, 4166 (2002)CrossRefGoogle Scholar

Copyright information

© TMS 2007

Authors and Affiliations

  • J.S. Park
    • 1
  • J.H. Chang
    • 2
  • T. Minegishi
    • 1
  • H.J. Lee
    • 1
  • S.H. Park
    • 1
  • I.H. Im
    • 1
  • T. Hanada
    • 1
  • S.K. Hong
    • 3
  • M.W. Cho
    • 1
    • 4
  • T. Yao
    • 1
    • 4
  1. 1.Institute for Materials ResearchTohoku UniversitySendaiJapan
  2. 2.Major of Semiconductor PhysicsKorea Maritime UniversityPusanRepublic of Korea
  3. 3.Department of Nano Information Systems EngineeringChungnam National UniversityDaejeonRepublic of Korea
  4. 4.Center for Interdisciplinary ResearchTohoku UniversitySendaiJapan

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