Journal of Electronic Materials

, Volume 37, Issue 4, pp 439–447

Practical Surface Treatments and Surface Chemistry of n-Type and p-Type GaN

  • J.J. Uhlrich
  • L.C. Grabow
  • M. Mavrikakis
  • T.F. Kuech
Article

Abstract

X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) were used to study the electronic structure of n-GaN and p-GaN(0001) surfaces after three ex situ surface treatments: aq-HCl, annealing in NH3, and annealing in HCl vapor. The combination of in situ vacuum annealing and re-exposure of samples to air revealed that the adsorption of ambient contaminants can reduce the surface state density and subsequent band bending on both n-GaN and p-GaN surfaces. Insights derived from first-principles calculations of the adsorption of relevant species on the Ga-terminated GaN(0001) surface are used to explain these experimental observations qualitatively.

Keywords

Photoelectron spectroscopy GaN band bending DFT 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Copyright information

© TMS 2007

Authors and Affiliations

  • J.J. Uhlrich
    • 1
  • L.C. Grabow
    • 1
  • M. Mavrikakis
    • 1
  • T.F. Kuech
    • 1
  1. 1.Department of Chemical and Biological EngineeringUniversity of Wisconsin – MadisonMadisonUSA

Personalised recommendations