Preparation and Characterization of CdTe for Solar Cells, Detectors, and Related Thin-Film Materials

Cadmium telluride (CdTe) thin films were prepared by the close-space sublimation (CSS) technique, using 99.99% pure CdTe powder as the evaporant. Films were then annealed at 400°C for 30 min and were later dipped in Cu(NO₃)₂-H₂O solution at 80 ± 2°C. After immersion these films were again annealed at 400°C for 1 h to ensure the Cu diffusion into the films. X-ray diffraction (XRD) results confirmed the formation of a new compound copper telluride and a change in the morphology was observed by scanning electron microscopy (SEM). The DC electrical resistivity reduced from 10⁶ Ω-cm for as-deposited to 10⁻³ Ω-cm for 15 h immersed film. As the wt.% of Cu increased, the mobility increased to some extent, while the carrier concentration showed a systematic increase. The film thickness and optical parameter such as refractive index, absorption coefficient, and the optical band gap were deduced by fitting the optical transmittance in the wavelength range 300 to 3000 nm. The transmission decreased with increasing immersion time of films in the␣solution. The Cu concentration was recorded as 0.9 wt.% for 3 min to 56.6 wt.% for 15 h immersed samples using an electron microprobe analyzer (EMPA). In the next step, ITO/CdS/CdTe heterojunctions with 10.9% solar cell efficiency were fabricated on glass slides.