Journal of Electronic Materials

, Volume 37, Issue 5, pp 655–661 | Cite as

Imaging Surface Pits and Dislocations in 4H-SiC by Forescattered Electron Detection and Photoluminescence

Open Access
Article

Forescattered electron detection (FED) was utilized to image surface depressions resulting from threading screw and edge dislocations in 4H-SiC epitaxial layers. These surface depressions, or growth pits, exhibited two morphology types. Screw and edge dislocations could be imaged by photoluminescence and differentiated by their interactions with propagating partial dislocations (PDs). Correlations between FED and photoluminescence showed that sharp-apex pits 1 μm in size and strip-shaped pits 500 nm in size could be linked to individual screw and edge dislocations, respectively. Forescattered electron detection demonstrated sufficient sensitivity to image surface features previously resolvable only by atomic force microscopy. This new technique is nondestructive, noncontact, and capable of rapid, spatial mapping of growth pits resulting from threading screw and edge dislocations in SiC epitaxial layers.

Keywords

4H-SiC forescattered electrons growth pits surface depressions photoluminescence dislocations epitaxial layers 

Notes

Acknowledgements

Work at the Naval Research Laboratory was supported by the Office of Naval Research. Two of the authors recognize financial assistance from the National Research Council (Y. Picard) and the American Society of Engineering Education (K. Liu).

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Copyright information

© TMS 2007

Authors and Affiliations

  • Y.N. Picard
    • 1
  • K.X. Liu
    • 1
  • R.E. Stahlbush
    • 1
  • M.E. Twigg
    • 1
  1. 1.Electronics Science and Technology DivisionNaval Research LaboratoryWashingtonUSA

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