Journal of Electronic Materials

, Volume 37, Issue 5, pp 646–654 | Cite as

Some Critical Materials and Processing Issues in SiC Power Devices

Open Access
Article

There has been a rapid improvement in SiC materials and power devices during the last few years. However, the materials community has overlooked some critical issues, which may threaten the emergence of SiC power devices in the coming years. Some of these pressing materials and processing issues will be presented in this paper. The first issue deals with the possibility of process-induced bulk traps in SiC immediately under the SiC/SiO2 interface, which may be involved in the reduction of effective inversion layer electron mobility in SiC metal–oxide–semiconductor field-effect transistor (MOSFETs). The second issue addresses the effect of recombination-induced stacking faults (SFs) in majority carrier devices such as MOSFETs, Schottky diodes, and junction field-effect transistors (JFETs). In the past it was assumed that the SFs only affect the bipolar devices such as PiN diodes and thyristors. However, most majority carrier devices have built-in p–n junction diodes, which can become forward biased during operation in a circuit. Thus, all high-voltage SiC devices are susceptible to this phenomenon.

Keywords

SiC SiC power devices SiC/SiO2 interface interface traps bulk traps recombination-induced stacking faults effective inversion layer electron mobility 

Notes

Acknowledgements

The authors would like to acknowledge funding support from Dr. James Scofield of the Air Force Research Laboratory, Dayton, Ohio and Mr. Charles Scozzie of the Army Research Laboratory, Adelphi, Maryland for the work on bulk traps in SiC MOS structures. The authors are indebted to Dr. H. Dietrich of the Office of Naval Research and Dr. S. Beerman-Curtin of DARPA for providing funds for the development of the 10 kV SiC MOSFETs.

References

  1. 1.
    A. Agarwal, Material Sci Forum 556–557, 687 (2007)Google Scholar
  2. 2.
    A. Agarwal, H. Fatima, S. Haney, S.-H. Ryu, IEEE Electron Device Lett 28, 587 (2007)CrossRefGoogle Scholar
  3. 3.
    E. Arnold, IEEE Trans Electron Devices 46, 497 (1999)CrossRefGoogle Scholar
  4. 4.
    R. Schörner, P. Friedrichs, D. Peters, D. Stephani, IEEE Electron Device Lett 20, 241 (1999)CrossRefGoogle Scholar
  5. 5.
    L.A. Lipkin, J.W. Palmour, J Electron Mater 25, 909 (1996)CrossRefGoogle Scholar
  6. 6.
    P. Jamet, S. Dimitrijev, Appl Phys Lett 79, 323 (2001)CrossRefGoogle Scholar
  7. 7.
    G.Y. Chung, C.C. Tin, J.R. Williams, K. McDonald, R.K. Chanana, R.A. Weller, S.T. Pantelides, L.C. Feldman, O.W. Holland, M.K. Das, J.W. Palmour, IEEE Electron Dev Lett 22, 176 (2001)CrossRefGoogle Scholar
  8. 8.
    W.J. Choyke, R.P. Devaty, Silicon Carbide—Recent Major Advances, ed. by W.J. Choyke, H. Matsunami, and G. Pensl New York, Springer-Verlag, 413 (2003)Google Scholar
  9. 9.
    N. Achtziger, W. Witthuhn, Silicon Carbide—Recent Major Advances, ed. by W.J. Choyke, H. Matsunami, and G. Pensl, New York: Springer-Verlag, 537 (2003)Google Scholar
  10. 10.
    M.O. Aboelfotoh, J.P. Doyle, Phys Rev B 59, 10823 (1999)CrossRefGoogle Scholar
  11. 11.
    S. Mitra, M.V. Rao, N. Papanicolaou, K.A. Jones, M. Derenge, O.W. Holland, R.D. Vispute, S.R. Wilson, J Appl Phys 95, 69 (2004)CrossRefGoogle Scholar
  12. 12.
    J.P. Bergman, H. Lendenmann, P.-Å. Nilsson, U. Lindefelt, P. Skytt, Mater Sci Forum 353–356, 299 (2001)Google Scholar
  13. 13.
    J.Q. Liu, M. Skowronski, C. Hallin, R. Söderholm, H. Lendenmann, Appl Phys Lett 80, 749 (2002)CrossRefGoogle Scholar
  14. 14.
    M. Skowronski, S. Ha, J Appl Phys 99, 011101 (2006)CrossRefGoogle Scholar
  15. 15.
    J.J. Sumakeris, J.P. Bergman, M.K. Das, C. Hallin, B.A. Hull, E. Janzén, H. Lendenmann, M.J. O’Loughlin, M.J. Paisley, S. Ha, M. Skowronski, J.W. Palmour, C.H. Carter Jr., Material Sci Forum 527–529, 141 (2006)CrossRefGoogle Scholar
  16. 16.
    S-H. Ryu, S. Krishnaswami, B.A. Hull, J. Richmond, A. Agarwal, and A. Hefner, Proceedings of the 18th International Symposium on Power Semiconductor Devices & ICs (Naples, Italy, 2006), pp. 265–268Google Scholar
  17. 17.
    A. Galeckas, J. Linnros, P. Pirouz, Appl Phys Lett 81, 883 (2002)CrossRefGoogle Scholar
  18. 18.
    M. Treu, R. Rupp, C.S. Tai, P. Blaschitz, J. Hilsenbeck, H. Brunner, D. Peters, R. Elpelt, T. Reimann, Mater Sci Forum 527–529, 1155 (2006)Google Scholar
  19. 19.
    S. Krishnaswami, A. Agarwal, J. Richmond, T. Paul Chow, B. Geil, K. Jones, and C. Scozzie, Proceedings of the International Symposium on Power semiconductor devices and IC’s (ISPSD), (2006), pp. 289–292Google Scholar

Copyright information

© TMS 2007

Authors and Affiliations

  1. 1.Cree Inc.DurhamUSA

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