Journal of Electronic Materials

, Volume 36, Issue 12, pp 1555–1561 | Cite as

Microstructural Aspects of Nucleation and Growth of (In,Ga)As-GaAs(001) Islands with Low Indium Content

  • V.P. Kladko
  • V.V. Strelchuk
  • A.F. Kolomys
  • M.V. Slobodian
  • Yu.I. MazurEmail author
  • Zh.M. Wang
  • Vas. P. Kunets
  • G.J. Salamo

Molecular beam epitaxy growth of multilayer In x Ga1-x As/GaAs(001) structures with low indium content (x = 0.20–0.35) was studied by X-ray diffraction and photoluminescence in order to understand the initial stage of strain-driven island formation. The structural properties of these superlattices were investigated using reciprocal space maps, which were obtained around the symmetric 004 and asymmetric 113 and 224 Bragg diffraction, and ω/2θ scans with a high-resolution diffractometer in the triple axis configuration. Using the information obtained from the reciprocal space maps, the 004 ω/2θ scans were simulated by dynamical diffraction theory and the in-plane strain in the dot lattice was determined. We determined the degree of vertical correlation for the dot position (“stacking”) and lateral composition modulation period (LCM) (lateral ordering of the dots). It is shown that initial stage formation of nanoislands is accompanied by LCM only for [110] direction in the plane with␣a period of about 50 to 60 nm, which is responsible for the formation of a quantum wire like structure. The role of In x Ga1-x As thickness and lateral composition modulation in the formation of quantum dots in strained In x Ga1-x As/GaAs structures is discussed.


InGaAs self-organized quantum dots X-ray diffraction photoluminescence 


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  1. 1.
    P. Bhattacharya, S. Ghosh and A.D. Stiff-Roberts: Annu. Rev. Mater. Res. 34, 1 (2004).CrossRefGoogle Scholar
  2. 2.
    V. M. Ustinov, A. E. Zhukov, A. Yu. Egorov and N. A. Maleev: Quantum Dot Lasers (N.Y., Oxford University Press 2003).Google Scholar
  3. 3.
    D. Bimberg, M. Grundmann and N. N. Ledensov, Quantum Dot Heterostructures (Wiley & Sons, 1999).Google Scholar
  4. 4.
    P.B. Joyce, T. J. Krzyzewski, G.R. Bell, B.A. Joyce and T.S. Jones: Phys. Rev. B 58, R15981 (1998).CrossRefGoogle Scholar
  5. 5.
    G. Medeiros-Ribeiro, A. M. Bratkovski, T. I. Kamins, D. A. A. Ohlberg and R. S. Williams: Science 279, 353 (1998).CrossRefGoogle Scholar
  6. 6.
    M. Henini, Nanoscale Res. Lett. 1, 32 (2006).Google Scholar
  7. 7.
    M. Ya. Valakh, V.V. Strelchuk, A.F. Kolomys, Yu.I. Mazur, Zh.M. Wang, M. Xiao and G.J. Salamo: Semiconductors 39, 127 (2005).CrossRefGoogle Scholar
  8. 8.
    N. Ikoma and S. Ohkouchi: Jpn. J. Appl. Phys. 34, L724 (1995).CrossRefGoogle Scholar
  9. 9.
    N. Grandjean, J. Massies and O. Tottereau: Phys. Rev. B 55, R10189 (1997).CrossRefGoogle Scholar
  10. 10.
    B. Shin, B. Lita, R. S. Goldman, J. D. Phillips and P. K. Bhattacharya: Appl. Phys. Lett. 81, 1423 (2002).CrossRefGoogle Scholar
  11. 11.
    Y.H. Chen, X.L. Ye, and Z.G. Wang, Nanoscale Res. Lett. 1, 79 (2006).Google Scholar
  12. 12.
    R.D. Twesten, D.M. Follstaedt, S.R. Lee, E.D. Jones, J.L. Reno, J.M. Millunchick, A.G. Norman, S.P. Ahrenkiel, and A. Mascarenhas: Phys. Rev. B 60, 13619 (1999).CrossRefGoogle Scholar
  13. 13.
    R. Heitz, T. R. Ramachandran, A. Kalburge, Q. Xie, I. Mukhametzhanov, P. Chen and A. Madhukar: Phys. Rev. Lett. 78, 4071 (1997).CrossRefGoogle Scholar
  14. 14.
    P. Podemski, R. Kudrawiec, J. Misiewicz, A. Somers, J.P. Reithmaier, and A. Forchel: Appl. Phys. Lett. 89, 061902 (2006).CrossRefGoogle Scholar
  15. 15.
    V.V. Strelchuk, P.M. Lytvyn, A.F. Kolomys, M.Ya. Valakh, Yu.I. Mazur, Zh.M. Wang, and G.J. Salamo: Semiconductors 41, 73 (2007).CrossRefGoogle Scholar
  16. 16.
    Yu.I. Mazur, Zh.M. Wang, G.J. Salamo, V.V. Strelchuk, V.P. Kladko, V.F. Machulin, M.Ya. Valakh and M.O. Manasreh: J. Appl. Phys. 99, 023517 (2006).CrossRefGoogle Scholar
  17. 17.
    A. Michon, I. Sagnes, G. Patriarche, G. Beaudoin, M.N. Mèrat-Combes, and G. Saint-Girons: Phys. Rev. B 73, 165321 (2006).CrossRefGoogle Scholar
  18. 18.
    J. Tersoff and R.M. Tromp: Phys. Rev. Lett. 70, 2782 (1993).CrossRefGoogle Scholar
  19. 19.
    C. Priester and M. Lannoo: Phys. Rev. Lett. 75, 93 (1995).CrossRefGoogle Scholar
  20. 20.
    F.M. Ross, R.M. Tromp and M.C. Reuter: Science 286, 1931 (1999).CrossRefGoogle Scholar
  21. 21.
    S.O. Cho, Zh.M. Wang, and G.J. Salamo: Appl. Phys. Lett. 86, 113106 (2005).CrossRefGoogle Scholar
  22. 22.
    O. Kirfel, E. Muller, D. Grutzmacher, K. Kern, Physica E 16, 602 (2003).CrossRefGoogle Scholar
  23. 23.
    M. Schmidbauer: X-Ray Diffuse Scattering from Self-Organized Mesoscopic Semiconductor Structures (Springer Tracts in Modern Physics, Vol. 199 (Springer, Berlin rg) p. 204 (2004)).Google Scholar
  24. 24.
    V. V. Strelchuk, V. P. Kladko, O. M. Yefanov, O. I. Gudymenko, M. Ya. Valakh, A. F. Kolomys, Yu. I. Mazur, Zh. M. Wang and G. J. Salamo: Semiconductor Phys., Quantum Electronics & Optoelectronics 8, 35 (2005).Google Scholar
  25. 25.
    D. Grigoriev, M. Schmidbauer, P. Schäfer, S. Besedin, Yu.I. Mazur, Zh.M. Wang, G.J. Salamo and R. Köhler: J. Phys. D: Appl. Phys. 38, A154 (2005).CrossRefGoogle Scholar
  26. 26.
    E. Penev, P. Kratzer and M. Scheffler: Phys. Rev. B 64, 085401 (2001).CrossRefGoogle Scholar
  27. 27.
    P. Sutter and M. G. Lagally: Phys. Rev. Lett. 84, 4637 (2000).CrossRefGoogle Scholar
  28. 28.
    A. Gustafsson, M. -E. Pistol, L. Montelius and L. Samuelson: J. Appl. Phys. 84, 1715 (1998).CrossRefGoogle Scholar
  29. 29.
    Yung-Hui Yeh and Joseph Ya-min Lee: J. Appl. Phys. 81, 6921 (1997).CrossRefGoogle Scholar
  30. 30.
    G Saint-Girons and I. Sagnes: J. Appl. Phys. 91, 10115 (2002).CrossRefGoogle Scholar
  31. 31.
    A. A. Darhuber, P. Schittenhelm, V. Holy, J. Stangl, G. Bauer, and G. Abstreiter: Phys. Rev. B 55, 15652 (1997).CrossRefGoogle Scholar
  32. 32.
    Zh.M. Wang, Yu.I. Mazur, G.J. Salamo, P.M. Lytvyn, V.V. Strelchuk and M.Ya. Valakh: Appl. Phys. Lett. 84, 4681 (2004).CrossRefGoogle Scholar

Copyright information

© TMS 2007

Authors and Affiliations

  • V.P. Kladko
    • 1
  • V.V. Strelchuk
    • 1
  • A.F. Kolomys
    • 1
  • M.V. Slobodian
    • 1
  • Yu.I. Mazur
    • 2
    Email author
  • Zh.M. Wang
    • 2
  • Vas. P. Kunets
    • 2
  • G.J. Salamo
    • 2
  1. 1.Lashkaryov Institute of Semiconductor PhysicsNAS of UkraineKyivUkraine
  2. 2.Department of PhysicsUniversity of ArkansasFayettevilleUSA

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