Journal of Electronic Materials

, Volume 36, Issue 4, pp 442–445

Changes in Electrical Characteristics of ZnO Thin Films Due to Environmental Factors

Special Issue Paper

The impact of light and controlled gas ambient on the electrical characteristics of ZnO:P grown by pulsed laser deposition (PLD) is investigated with temperature-dependent Hall-effect and photo-Hall-effect using above-bandgap light. Exposure to blue/ultraviolet (UV) light results in long-lived persistent photoconductivity (PPC) effects dominated by electron conduction. However, these persistent effects can be largely reversed by exposing the sample to a controlled ambient of dry O2 gas. These O2-induced changes in the electronic properties persist in vacuum up to at least 400 K. Exposure to dry N2 gas following blue/UV light has no effect on the observed PPC characteristics. The implications of these effects on the preparation of p-type ZnO will be discussed.


p-type ZnO photo-Hall-effect persistent photoconductivity (PPC) mixed conduction semiconducting II-VI materials zinc oxide 


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  1. 1.
    K. Minegishi, Y. Koiwai, K. Kikuchi, Jpn. J. Appl. Phys. 36, L1453 (1997)CrossRefGoogle Scholar
  2. 2.
    Y.R. Ryu, S. Zhu, D.C. Look, J.M. Wrobel, H.M. Jeong, H.W. White, J. Cryst. Growth 216, 330 (2000)CrossRefGoogle Scholar
  3. 3.
    D.C. Look, D.C. Reynolds, C.W. Litton, R.L. Jones, D.B. Eason, G. Cantwell, Appl. Phys. Lett. 81, 1830 (2002)CrossRefGoogle Scholar
  4. 4.
    K.-K. Kim, H.-S. Kim, D.-K. Hwang, J.-H. Lim, S.-J. Park, Appl. Phys. Lett. 83, 63 (2003)CrossRefGoogle Scholar
  5. 5.
    D.C. Look, G.M. Renlund, R.H. Burgener, J.R. Sizelove, Appl. Phys. Lett. 85, 5269 (2004)CrossRefGoogle Scholar
  6. 6.
    Y.W. Heo, K. Ip, S.J. Park, S.J. Pearton, D.P. Norton, Appl. Phys. A 78, 53 (2004)CrossRefGoogle Scholar
  7. 7.
    D.K. Hwang, S.H. Kang, J.H. Lim, E.J. Yang, J.Y. Oh, J.H. Yang, S.J. Park, Appl. Phys. Lett. 86, 222101 (2005)CrossRefGoogle Scholar
  8. 8.
    C.H. Park, S.B. Zhang, S.H. Wei, Phys. Rev. B 66, 073202 (2002)CrossRefGoogle Scholar
  9. 9.
    S. Limpijumnong, S.B. Zhang, S.-H. Wei, C.H. Park, Phys. Rev. Lett. 92, 155504 (2004)CrossRefGoogle Scholar
  10. 10.
    D.B. Laks, C.G. Van de Walle, G.F. Neumark, S.T. Pantelides, Appl. Phys. Lett. 63, 1375 (1993)CrossRefGoogle Scholar
  11. 11.
    B.K. Meyer et al. Phys. Status Solidi B 241, 231 (2004)CrossRefGoogle Scholar
  12. 12.
    B. Claflin, D.C. Look, S.J. Park, G. Cantwell, J. Cryst. Growth 287, 16 (2006)CrossRefGoogle Scholar
  13. 13.
    O. Schmidt, P. Kiesel, C.G. Van de Walle, N.M. Johnson, J. Nause, G.H. Döhler, Jpn. J. Appl. Phys. 1 44, 7271 (2005)CrossRefGoogle Scholar
  14. 14.
    O. Schmidt, A. Geis, P. Kiesel, C.G. Van de Walle, N.M. Johnson, A. Bakin, A. Waag, G.H. Döhler, Superlattice Microstruct. 39, 8 (2006)CrossRefGoogle Scholar
  15. 15.
    H. Moormann, D. Kohl, G. Heiland, Surf. Sci. 100, 302 (1980)CrossRefGoogle Scholar
  16. 16.
    J.Q. Xu, Q.Y. Pan, Y.A. Shun, Z.Z. Tian, Sensor Actuat. B-Chem. 66, 277 (2000)CrossRefGoogle Scholar
  17. 17.
    F. Paraguay D., M. Miki-Yoshida, J. Morales, J. Solis, W. Estrada L., Thin Solid Films 373, 137 (2000)CrossRefGoogle Scholar
  18. 18.
    D.J. Leary, J.O. Barnes, A.G. Jordan, J. Electrochem. Soc. 129, 1382 (1982)CrossRefGoogle Scholar
  19. 19.
    D.C. Look, Electrical Characterization of GaAs Materials and Devices (New York: Wiley, 1989), p. 87Google Scholar

Copyright information

© TMS 2007

Authors and Affiliations

  1. 1.Materials and Manufacturing DirectorateAFRL/MLPS, WPAFBDaytonUSA
  2. 2.Semiconductor Research CenterWright State UniversityDaytonUSA
  3. 3.Department of Materials Science & EngineeringUniversity of FloridaGainesvilleUSA

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