Journal of Electronic Materials

, Volume 34, Issue 5, pp 655–661 | Cite as

Molecular beam epitaxial growth and characterization of Cd-based II–VI wide-bandgap compounds on Si substrates

  • G. Brill
  • Y. Chen
  • P. M. Amirtharaj
  • W. Sarney
  • D. Chandler-Horowitz
  • N. K. Dhar
Special Issue Paper
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Accepted:

Abstract

We have carried out a detailed study on the growth of Cd-based II–VI compounds on Si substrates using molecular beam epitaxy (MBE). CdTe, CdSe, CdSeTe, and CdZnSeTe layers were nucleated and grown on Si(211) substrates in order to study a broad range of semiconductor properties, such as crystal structure, fundamental bandgap, surface morphology, and defect and dislocation density as a function of the constituent elements. For structural characterization, we used transmission electron microscopy (TEM) and x-ray diffraction, which indicated that cubic Cd1-xSexTe material had been grown on Si substrates throughout the entire composition range. Likewise, photoreflectance (PR) and photoluminescence (PL) were used to measure the optical response in the near bandgap (Eg) region. Results indicated nonrandom ordering of CdSeTe/Si material. Studies on quaternary CdZnSeTe material indicated that Zn and Se concentrations directly impact surface morphology with extremely smooth surfaces obtained as Zn content is decreased.

Key words

CdSeTe CdSe CdZnSeTe Si (211) molecular beam epitaxy (MBE) photoluminescence (PL) photoreflectance (PR) zincblende wurtzite cubic quaternary ternary transmission electron microscopy (TEM) bandgap defects bowing 
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Copyright information

© TMS-The Minerals, Metals and Materials Society 2005

Authors and Affiliations

  • G. Brill
    • 1
  • Y. Chen
    • 1
  • P. M. Amirtharaj
    • 1
  • W. Sarney
    • 2
  • D. Chandler-Horowitz
    • 2
  • N. K. Dhar
    • 1
  1. 1.Sensors and Electron Devices DirectorateU.S. Army Research LaboratoryAdelphi
  2. 2.Semiconductor Electronics DivisionNational Institute of Standards and TechnologyGaithersburg

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