Normal-incidence mid-infrared Ge quantum-dot photodetector
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Mid-infrared photodetectors were demonstrated by using molecular-beam epitaxy (MBE)-grown self-assembled Ge quantum dots (QDs). The response wavelength ranged from 2.2 µm to 3.1 µm and peaked at 2.8 µm. The peak response wavelengths shifted to 2.9 µm and 3.5 µm after thermal annealing at 700°C and 900°C for 5 min, respectively. Normal-incidence detection was confirmed, and the mechanism of a Ge QD photodetector was discussed. Calculations showed the key parameters determining response wavelength of the Ge QD infrared photodetector, which agreed with experimental results.
Key wordsGe quantum dot (QD) mid-infrared photodetector annealing
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