Interfacial reaction study on a solder joint with Sn-4Ag-0.5Cu solder ball and Sn-7Zn-Al (30 ppm) solder paste in a lead-free wafer level chip scale package
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Abstract
The interfacial reactions of solder joints between the Sn-4Ag-0.5Cu solder ball and the Sn-7Zn-Al (30 ppm) presoldered paste were investigated in a wafer level chip scale package (WLCSP). After appropriate surface mount technology (SMT) reflow process on the printed circuit board (PCB) with organic solderability preservative (Cu/OSP) and Cu/Ni/Au surface finish, samples were subjected to 150°C high-temperature storage (HTS), 1,000 h aging. Sequentially, the cross-sectional analysis is scrutinized using a scanning electron microscope (SEM)/energy-dispersive spectrometer (EDS) and energy probe microanalysis (EPMA) to observe the metallurgical evolution in the interface and solder buck itself. It was found that Zn-enriched intermetallic compounds (IMCs) without Sn were formed and migrated from the presolder paste region into the solder after reflow and 150°C HTS test.
Key words
Interfacial reaction lead-free solder intermetallic compound (IMC) Sn-Zn-Al solder paste wafer level chip scale package (WLCSP)Preview
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References
- 1.R.A. Fournelle, JOM 55 (6), 49 (2003).Google Scholar
- 2.M. Abtew and G. Selvaduray, Mater. Sci. Eng. 27, 95 (2000).CrossRefGoogle Scholar
- 3.S.K. Kang, JOM 54 (6), 25 (2002).Google Scholar
- 4.D.R. Frear, J.W. Jang, J.K. Lin, and C. Zhang, JOM 53, 28 (2001).Google Scholar
- 5.P. Vianco, in Handbook of Lead (Pb)-Free Technology for Microelectronic Assembly (New York: Marcel-Dekker, 2004) pp. 167–210.Google Scholar
- 6.K.S. Kim, S.H. Huh, and K. Suganuma, J. Alloys Compounds 352, 226 (2003).CrossRefGoogle Scholar
- 7.K.L. Lin, L.H. Wen, and T.P. Lin, J. Electron. Mater. 27, 97 (1998).Google Scholar
- 8.K.L. Lin, K.J. Chen, H.M. Hsu, and L. Shi, 2003 Electr. Comp. Technol. Conf. 658 (2003).Google Scholar
- 9.A. Sebaoun, D. Vincent, and D. Treheux, Mater. Sci. Technol. 3, 241 (1987).Google Scholar
- 10.K.L. Lin and T.P. Liu, Oxid. Met. 50, 255 (1998).CrossRefGoogle Scholar
- 11.K.L. Lin and L.H. Wen, J. Mater. Sci. 9, 5 (1998).Google Scholar
- 12.K.L. Lin and Y.C. Wang, J. Electron. Mater. 27, 1205 (1998).CrossRefGoogle Scholar