Journal of Electronic Materials

, Volume 33, Issue 6, pp 556–559

Wet-chemical etching of (11\(\bar 2\)0) ZnO films0) ZnO films

  • J. Zhu
  • N. W. Emanetoglu
  • Y. Chen
  • B. V. Yakshinskiy
  • Y. Lu
Special Issue Paper

DOI: 10.1007/s11664-004-0046-5

Cite this article as:
Zhu, J., Emanetoglu, N.W., Chen, Y. et al. Journal of Elec Materi (2004) 33: 556. doi:10.1007/s11664-004-0046-5

Abstract

This paper describes the optimized process of wet-chemical etching of a ZnO film grown on an r-plane sapphire. Different etchants and solution ratios have been used to achieve controllable etching rate and steep etching profile. With selected etching solutions, the etching profiles of epitaxially grown ZnO films (>1.3 µm) are improved. Using Al instead of photoresist as the mask generates a steeper etching slope. Maximal 1:1 vertical/horizontal ratio (45°) has been achieved. X-ray photoelectron spectroscopy (XPS) and sheet resistance measurements show that this wet-chemical etching process has negligible influence on the modification of the physical and chemical properties of the etched surface.

Key words

Wet-chemical etching ZnO etching mask anisotropy 

Copyright information

© TMS-The Minerals, Metals and Materials Society 2004

Authors and Affiliations

  • J. Zhu
    • 1
  • N. W. Emanetoglu
    • 1
  • Y. Chen
    • 1
  • B. V. Yakshinskiy
    • 2
  • Y. Lu
    • 1
  1. 1.Department of Electrical and Computer EngineeringRutgers UniversityPiscataway
  2. 2.Department of PhysicsRutgers UniversityUSA

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