Journal of Electronic Materials

, Volume 32, Issue 9, pp 976–980 | Cite as

Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition

  • Shawn G. Thomas
  • Sushil Bharatan
  • Robert E. Jones
  • Rainer Thoma
  • Thomas Zirkle
  • N. V. Edwards
  • Ran Liu
  • Xiang Dong Wang
  • Qianghua Xie
  • Carsten Rosenblad
  • Juergen Ramm
  • Giovanni Isella
  • Hans Von Känel
Regular Issue Paper

Abstract

In this paper, we report on the growth of epitaxial Ge on a Si substrate by means of low-energy plasma-enhanced chemical vapor deposition (LEPECVD). A Si1−xGex graded buffer layer is used between the silicon substrate and the epitaxial Ge layer to reduce the threading dislocation density resulting from the lattice mismatch between Si and Ge. An advantage of the LEPECVD technique is the high growth rate achievable (on the order of 40 Å/sec), allowing thick SiGe graded buffer layers to be grown faster than by other epitaxial techniques and thereby increasing throughput in order to make such structures more manufacturable. We have achieved relaxed Ge on a silicon substrate with a threading dislocation density of 1 × 105 cm−2, which is 4−10x lower than previously reported results.

Key words

SiGe graded buffer threading dislocation optoelectronics 

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Copyright information

© TMS-The Minerals, Metals and Materials Society 2003

Authors and Affiliations

  • Shawn G. Thomas
    • 1
  • Sushil Bharatan
    • 1
  • Robert E. Jones
    • 1
  • Rainer Thoma
    • 1
  • Thomas Zirkle
    • 1
  • N. V. Edwards
    • 2
  • Ran Liu
    • 2
  • Xiang Dong Wang
    • 2
  • Qianghua Xie
    • 2
  • Carsten Rosenblad
    • 3
  • Juergen Ramm
    • 3
  • Giovanni Isella
    • 4
  • Hans Von Känel
    • 4
    • 5
  1. 1.Si RF/IF Technologies, DigitalDNA LaboratoriesMotorola, Tempe
  2. 2.Process and Materials Characterization LaboratoriesMotorola, Tempe
  3. 3.High Speed SiliconUnaxis Balzers LtdBalzers
  4. 4.Laboratorium für FestkörperphysikETH ZürichZürichSwitzerland
  5. 5.Dipartimento di Fisica, Politecnico di MilanoSede di ComoComoItaly

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