Journal of Electronic Materials

, Volume 32, Issue 3, pp 111–116

InP and Si metal-oxide semiconductor structures fabricated using oxygen plasma assisted wafer bonding

  • Markus Forsberg
  • Donato Pasquariello
  • Martin Camacho
  • David Bergman
Regular Issue Paper

DOI: 10.1007/s11664-003-0180-5

Cite this article as:
Forsberg, M., Pasquariello, D., Camacho, M. et al. Journal of Elec Materi (2003) 32: 111. doi:10.1007/s11664-003-0180-5

Abstract

In this paper, InP metal-oxide-semiconductor (MOS) structures are fabricated by transferring thermally grown SiO2 to InP from oxidized Si wafers using oxygen plasma assisted wafer bonding followed by annealing at either 125°C or at 400°C. Well-defined accumulation and inversion regions in recorded capacitance-voltage (C-V) curves were obtained. The long-term stability was comparable to what has been previously reported. The structures exhibited high breakdown fields, equivalent to thermally grown SiO2-Si MOS structures. The transferring process was also used to fabricate bonded Si MOS structures.

Key words

C-V measurement InP Si MOS oxygen plasma wafer bonding 

Copyright information

© TMS-The Minerals, Metals and Materials Society 2003

Authors and Affiliations

  • Markus Forsberg
    • 1
  • Donato Pasquariello
    • 2
  • Martin Camacho
    • 3
  • David Bergman
    • 1
  1. 1.The Ångström LaboratoryUppsala UniversityUppsalaSweden
  2. 2.Department of Electrical and Computer EngineeringUniversity of CaliforniaSanta BarbaraUSA
  3. 3.Micronic Laser SystemsTäbySweden

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