Advertisement

Journal of Electronic Materials

, Volume 32, Issue 5, pp 452–457 | Cite as

Effect of boron on the resistivity of compensated 4H-SiC

  • R. R. Ciechonski
  • M. Syväjärvi
  • A. Kakanakova-Georgieva
  • R. Yakimova
Special Issue Paper

Abstract

High-resistivity 4H-SiC samples grown by sublimation with a high growth rate are studied. The measurements show resistivity values up to a high of 104 Ωcm. The secondary ion mass spectroscopy (SIMS) results revealed a presence of only common trace impurities such as nitrogen, aluminum, and boron. To understand the compensation mechanism in these samples, capacitance deep-level transient spectroscopy (DLTS) on the p-type epilayers has been performed. By correlation between the growth conditions and SIMS results, we apply a model in which it is proposed that an isolated carbon vacancy donorlike level is a possible candidate responsible for compensation of the shallow acceptors in p-type 4H-SiC. A relation between cathodoluminescence (CL) and DLTS data is taken into account to support the model.

Key words

SiC sublimation epitaxy DLTS compensation deep levels carbon vacancy high resistivity semi-insulating 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    G. Augustine, H.McD. Hobgood, V. Balakrishna, G.T. Dunne, R.H. Hopkins, R.N. Thomas, W.A. Doolittle, and A. Rohatgi, Mater. Sci. Forum 264–268, 9 (1998).Google Scholar
  2. 2.
    M. Bickermann, D. Hofmann, T.L. Straubinger, R. Weingaertner, and A. Winnacker, Mater. Sci. Forum 139, 389 (2002).Google Scholar
  3. 3.
    O. Noblanc, C. Arnodo, C. Dua, E. Chartier, and C. Brylinski, Mater. Sci. Forum 338–342, 1247 (2000).Google Scholar
  4. 4.
    St.G. Mueller, M.F. Brady, W.H. Brixius, G. Fechko, R.C. Glass, D. Henshall, H.McD. Hobgood, J.R. Jenny, R. Leonard, D. Malta, A. Powell, V.F. Tsvetkov, S. Allen, J. Palmour, and C.H. Carter, Jr., Mater. Sci. Forum 389–393, 23 (2002).Google Scholar
  5. 5.
    J.R. Jenny, S.G. Mueller, A. Powell, V.F. Tvetskov, H.McD. Hobgood, R.C Glass, and C.H. Carter, Jr., J. Electron. Mater. 31, 366 (2002).CrossRefGoogle Scholar
  6. 6.
    A. Ellison, B. Magnusson, C. Hemmingsson, W. Magnusson, T. Iakimov, L. Storasta, A. Henry, N. Henelius, and E. Janzén, Mater. Res. Symp. Proc. 640, H1.2 (2001).Google Scholar
  7. 7.
    A. Ellison, B. Magnusson, N.T. Son, L. Storasta, and E. Janzén, Mater. Sci. Forum 33, 433 (2003).Google Scholar
  8. 8.
    A. Kakanakova-Georgieva, R. Yakimova, J. Zhang, L. Storasta, M. Syväjärvi, and E. Janzén, Mater. Sci. Forum 389–393, 259 (2002).Google Scholar
  9. 9.
    H. Itoh, T. Troffer, C. Peppermeuller, and G. Pensl, Appl. Phys. Lett. 73, 1427 (1998).CrossRefGoogle Scholar
  10. 10.
    M. Syväjärvi, R. Yakimova, A. Kakanakova-Georgieva, M. Tuominen, M.F. MacMillan, A. Henry, Q. Wahab, C. Hemmingsson, and E. Janzén, J. Cryst. Growth 197, 155 (1999).CrossRefGoogle Scholar
  11. 11.
    D.V. Lang, J. Appl. Phys. 45, 3023 (1974).CrossRefGoogle Scholar
  12. 12.
    R. Brunwin, B. Hamilton, P. Jordan, and A.R. Peaker, Electron. Lett. 15, 349 (1979).CrossRefGoogle Scholar
  13. 13.
    L.J. Brillson, S. Chang, A.D. Raisanen, and I.M. Vitomirov, Scanning Microsc. Suppl. 9, 173 (1995).Google Scholar
  14. 14.
    C.G. Hemmingsson, N.T. Son, O. Kordina, J.P. Bergman, and E. Janzén, J. Appl. Phys. 81, 6155 (1997).CrossRefGoogle Scholar
  15. 15.
    N.T. Son, P.N. Hai, and E. Janzén, Phys. Rev. B 63, 201201 (2001).Google Scholar
  16. 16.
    V.I. Levin, Yu.M. Tairov, and V.F. Tsvetskov, Sov. Phys. Semicond. 18, 747 (1984).Google Scholar
  17. 17.
    Yu.M. Tairov and V.F. Tsvetskov, Progr. Crystal Growth Characterization 7, 125 (1983).Google Scholar
  18. 18.
    Yu.A. Vodakov and E.N. Mokhov, Phys. Solid State 41, 742 (1999).CrossRefGoogle Scholar
  19. 19.
    A.A. Lebedev, Semiconductors 33, 107 (1999).CrossRefGoogle Scholar
  20. 20.
    A. Kakanakova-Georgieva, R. Yakimova, A. Henry, M.K. Linnarsson, M. Syväjärvi, and E. Janzén, J. Appl. Phys 91, 2890 (2002).CrossRefGoogle Scholar
  21. 21.
    M. Bockstedte, A. Mattausch, and O. Pankratov, Mater. Sci. Forum 353, 447 (2001).CrossRefGoogle Scholar
  22. 22.
    L. Storasta, J.P. Bergman, C. Hallin, and E. Janzén, Mater. Sci. Forum 389–393, 549 (2002).Google Scholar
  23. 23.
    C.G. Hemmingsson, N.T. Son, A. Ellison, J. Zhang, and E. Janzén, Phys Rev. B 58, 10119 (1998).CrossRefGoogle Scholar

Copyright information

© TMS-The Minerals, Metals and Materials Society 2003

Authors and Affiliations

  • R. R. Ciechonski
    • 1
  • M. Syväjärvi
    • 1
  • A. Kakanakova-Georgieva
    • 1
  • R. Yakimova
    • 1
  1. 1.Department of Physics and Measurement TechnologyLinköping UniversityLinköpingSweden

Personalised recommendations