Journal of Electronic Materials

, Volume 32, Issue 5, pp 452–457 | Cite as

Effect of boron on the resistivity of compensated 4H-SiC

  • R. R. Ciechonski
  • M. Syväjärvi
  • A. Kakanakova-Georgieva
  • R. Yakimova
Special Issue Paper


High-resistivity 4H-SiC samples grown by sublimation with a high growth rate are studied. The measurements show resistivity values up to a high of 104 Ωcm. The secondary ion mass spectroscopy (SIMS) results revealed a presence of only common trace impurities such as nitrogen, aluminum, and boron. To understand the compensation mechanism in these samples, capacitance deep-level transient spectroscopy (DLTS) on the p-type epilayers has been performed. By correlation between the growth conditions and SIMS results, we apply a model in which it is proposed that an isolated carbon vacancy donorlike level is a possible candidate responsible for compensation of the shallow acceptors in p-type 4H-SiC. A relation between cathodoluminescence (CL) and DLTS data is taken into account to support the model.

Key words

SiC sublimation epitaxy DLTS compensation deep levels carbon vacancy high resistivity semi-insulating 


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Copyright information

© TMS-The Minerals, Metals and Materials Society 2003

Authors and Affiliations

  • R. R. Ciechonski
    • 1
  • M. Syväjärvi
    • 1
  • A. Kakanakova-Georgieva
    • 1
  • R. Yakimova
    • 1
  1. 1.Department of Physics and Measurement TechnologyLinköping UniversityLinköpingSweden

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