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Journal of Electronic Materials

, Volume 32, Issue 10, pp 994–999 | Cite as

TaN-TiN binary alloys and superlattices as diffusion barriers for copper interconnects

  • H. Wang
  • A. Gupta
  • Ashutosh Tiwari
  • X. Zhang
  • J. Narayan
Special Issue Paper

Abstract

Binary alloys and superlattices of TaN-TiN thin films were grown on Si(100) substrates with a TiN buffer layer using pulsed laser deposition. A special target assembly was used to manipulate the concentrations of these binary component films. The 60% TaN resulted in a TaN (3 nm)/TiN (2 nm) superlattice, while 30% and 70% TaN generated uniform TaxTi1−xN alloys. X-ray diffraction (XRD), transmission electron microscopy (TEM), and scanning transmission electron microscopy (STEM) confirmed the single-crystalline nature of these films. Four-point probe resistivity measurements suggest that these alloy and superlattice films have a lower resistivity than pure single-crystalline TaN films. The Cu-diffusion characteristic studies showed that these materials would have the potential as high-temperature diffusion barriers for Cu in ultra-large-scale integration technology.

Key words

TaN TiN superlattice alloy Cu diffusion barrier 

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Copyright information

© TMS-The Minerals, Metals and Materials Society 2003

Authors and Affiliations

  • H. Wang
    • 1
  • A. Gupta
    • 1
    • 2
  • Ashutosh Tiwari
    • 1
  • X. Zhang
    • 2
  • J. Narayan
    • 1
  1. 1.Department of Materials Science and EngineeringNorth Carolina State UniversityRaleigh
  2. 2.Materials Science and Technology DivisionLos Alamos National LaboratoryLos Alamos

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