1.3 μm GaAs-based quantum well and quantum dot lasers: Comparative analysis
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Abstract
New generation of long-wavelength (1.3 μm) GaAs based lasers is discussed. The modal gain, threshold current, quantum efficiency characteristics and temperature stability of lasers based on InGaAsn quantum wells and InAs/InGaAs quantum dots are compared.
Key words
Diode laser molecular beam epitaxy nitrogen quantum dotsPreview
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