Journal of Electronic Materials

, Volume 30, Issue 7, pp 861–865 | Cite as

Effect of Pt barrier on thermal stability of Ti/Al/Pt/Au in ohmic contact with Si-implanted n-type GaN layers

  • Ching-Tingh Lee
  • Hsiao-Wei Kao
  • Fu-Tasi Hwang
Regular Issue Paper

Abstract

We report the effect of the Pt barrier on the thermal stability of Ti/Al/Pt/Au in ohmic contact with Si-implanted n-type GaN layers. Ti/Al/Au (25/100/200 nm) and Ti/Al/Pt/Au (25/100/50/200 nm) multilayers were, respectively, deposited on as-implanted and recovered Si-implanted n-type GaN samples. The associated dependence of the specific contact resistance on the annealing time at various temperatures was compared. The long-term ohmic stability of a Ti/Al/Pt/Au multilayer in contact with a Si-implanted n-type GaN layer was much better than that of the Ti/Al/Au multilayer. This superior stability is attributed to the barrier function of the Pt interlayer. The Pt/Au bilayer can also passivate the propensity of oxidation for the conventional Ti/Al bilayer in contact with n-type GaN layers at elevated temperatures.

Key words

Ohmic contact n-type GaN specific contact resistance 

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Copyright information

© TMS-The Minerals, Metals and Materials Society 2001

Authors and Affiliations

  • Ching-Tingh Lee
    • 1
  • Hsiao-Wei Kao
    • 1
  • Fu-Tasi Hwang
    • 1
  1. 1.Institute of Optical SciencesNational Central UniversityChung-LiTaiwan

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