Oxygen-related deep levels in Al0.5In0.5P grown by MOVPE
- 50 Downloads
Oxygen related defects in Al-containing materials have been determined to degrade luminescence efficiency and reduce carrier lifetime and affect the performance of light emitting diodes and laser diodes utilizing these materials. We have used the;metal-organic source diethylaluminum ethoxide (DEAlO) to intentionally incorporate oxygen-related defects during growth of Al0.5In0.5P by metal-organic vapor phase epitaxy (MOVPE). The incorporated oxygen forms several energy levels in the bandgap with energies of 0.62 eV to 0.89 eV below the conduction band detected using deep level transient spectroscopy. Secondary ion mass spectroscopy measurements of the total oxygen concentration in the layers shows a direct correlation to the measured trap concentrations. Several other energy levels are detected that are not correlated with the oxygen content of the film. The possible origin of these additional levels is discussed.
Key wordsOxygen defects metal-organic vapor phase epitaxy deep level transient spectroscopy deep levels AlInP
Unable to display preview. Download preview PDF.
- 1.D.P. Bour, Quantum Well Lasers, edited by P.S. Zory, Jr. (Boston, MA: Academic Press, 1993), p. 415.Google Scholar
- 3.T.F. Kuech, R. Potemski, F. Cardone, and G. Scilla, J. Electron. Mater. 21, 341 (1992).Google Scholar
- 4.M. Skowronski, Deep Centers in Semiconductors: A State-of-the-Art Approach, 2nd. ed., ed. S.T. Pantelides, (Philadelphia, PA: Gordon and Breach Science, 1992), p. 401.Google Scholar
- 5.J.W. Huang, D.F. Gaines, T.F. Kuech, R.M. Potemski, and F. Cardone, J. Electron. Mater. 23, 659 (1994).Google Scholar
- 6.J.W. Huang, J.M. Ryan, K.L. Bray, and T.F. Kuech, J. Electron. Mater. 24, 1539 (1995).Google Scholar
- 9.D.K. Schroder, Semiconductor Material and Device Characterization (New York: Wiley, 1998), p. 97.Google Scholar
- 12.J.C. Chen, Z.C. Huang, K.J. Lee, and R. Kanjolia, J. Electron. Mater. 26, 361 (1997).Google Scholar
- 15.M. Kondo, N. Okada, K. Domen, K. Sugiura, C. Anayarna, and T. Tanahashi, J. Electron. Mater. 23, 355 (1994).Google Scholar
- 21.P.M. Mooney, J. Appl. Phys. 67, R1 (1990).Google Scholar
- 23.J. Yoshino, M. Tachikawa, N. Matsuda, M. Mizuta, and H. Kukimoto, Jpn. J. Appl. Phys. 23, L29 (1984).Google Scholar
- 26.B. Bieg, J.G. Cederberg, and T.F. Kuech, unpublished.Google Scholar