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Journal of Electronic Materials

, Volume 29, Issue 12, pp 1387–1391 | Cite as

Molecular beam epitaxial growth of BGaAs ternary compounds

  • V. K. Gupta
  • M. W. Koch
  • N. J. Watkins
  • Y. Gao
  • G. W. Wicks
Regular Issue Paper

Abstract

BxGa1−xAs ternary compounds with boron compositions varying up to x=1% have been grown by molecular beam epitaxy. Reflection high energy electron diffraction and double crystal x-ray diffraction measurements show that grown layers are single crystal with boron composition up to 0.25% and exhibit specular surface morphology. Photoluminescence measurements indicated a monotonic increase in energy bandgap with boron composition up to 0.25%. The layers showed p-type conductivity with hole concentration reaching the low 1019 cm−3 range. Increasing boron concentrations leads to rough surface morphology and reduction in photoluminescence intensity. Initial results indicate that lower growth temperature may be useful for increasing boron incorporation in BGaAs compounds.

Key words

GaAs molecular beam epitaxy boron 

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Copyright information

© TMS-The Minerals, Metals and Materials Society 2000

Authors and Affiliations

  • V. K. Gupta
    • 1
  • M. W. Koch
    • 1
  • N. J. Watkins
    • 2
  • Y. Gao
    • 2
  • G. W. Wicks
    • 1
  1. 1.The Institute of OpticsUniversity of RochesterRochester
  2. 2.Department of Physics and AstronomyUniversity of RochesterRochester

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