Molecular beam epitaxial growth of BGaAs ternary compounds
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BxGa1−xAs ternary compounds with boron compositions varying up to x=1% have been grown by molecular beam epitaxy. Reflection high energy electron diffraction and double crystal x-ray diffraction measurements show that grown layers are single crystal with boron composition up to 0.25% and exhibit specular surface morphology. Photoluminescence measurements indicated a monotonic increase in energy bandgap with boron composition up to 0.25%. The layers showed p-type conductivity with hole concentration reaching the low 1019 cm−3 range. Increasing boron concentrations leads to rough surface morphology and reduction in photoluminescence intensity. Initial results indicate that lower growth temperature may be useful for increasing boron incorporation in BGaAs compounds.
Key wordsGaAs molecular beam epitaxy boron
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- 7.G.W. Wicks, III-V Semiconductor Materials in the Handbook of Photonics, ed. Mool C. Gupta (Boca Raton, FL: CRC Press, 1997).Google Scholar