Skip to main content
SpringerLink
Log in

Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1-xN grown on sapphire

  • Special Issue Paper
  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

A band-tail model of inhomogeneously broadened radiative recombination is presented and applied to interpret experimental data on photoluminescence of various bulk and quantum-well epitaxial InGaN/GaN structures grown by MOCVD. The temperature dependence of the spectral peak position is analyzed according to the model, explaining the anomalous temperature-induced blue spectral shift. Significant differences are observed between epilayers grown on sapphire substrates and on GaN substrates prepared by the sublimation method. No apparent evidence of band tails in homoepitaxial structures indicates their higher crystalline quality.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. S.N. Mohammad and H. Morkoç, Prog. Quantum Electron. 20, 361 (1996).

    Article  CAS  Google Scholar 

  2. S. Nakamura and G. Fasol, The Blue Laser Diode: GaN Based Light Emitters and Lasers (Berlin: Springer-Verlag, 1997).

    Google Scholar 

  3. J.W. Orton and C.T. Foxon, Rep. Prog. Phys. 61, 1 (1998).

    Article  CAS  Google Scholar 

  4. O. Ambacher, J. Phys. D: Appl. Phys. 31, 2653 (1998).

    Article  CAS  Google Scholar 

  5. I.V. Akimova, P.G. Eliseev, and M. Osinski, Quantum Electron. 28, 987 (1998).

    Article  Google Scholar 

  6. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, Appl. Phys. Lett. 69, 4188 (1996).

    Article  CAS  Google Scholar 

  7. Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, S. Fujita, and S. Nakamura, Appl. Phys. Lett. 70, 981 (1997).

    Article  CAS  Google Scholar 

  8. I.V. Akimova, P.G. Eliseev, M.A. Osinski, and P. Perlin, Quantum Electron. 26, 1039 (1996).

    Article  Google Scholar 

  9. M. Osinski, P. Perlin, P.G. Eliseev, and J. Furioli, Light-Emitting Diodes: Research, Manufacturing, and Applications, SPIE Proc. 3002, ed. E.F. Schubert (Bellingham, WA: SPIE, 1997), p. 15.

    Google Scholar 

  10. P. Perlin, M. Osinski, and P.G. Eliseev, III-V Nitrides, ed. F.A. Ponce, T.D. Moustakas, I. Akasaki, and B.A. Monemar (Pittsburgh, PA: Mater. Res. Soc., 1997), p. 1173.

    Google Scholar 

  11. P.G. Eliseev, P. Perlin, J. Lee, and M. Osinski, Appl. Phys. Lett. 71, 569 (1997).

    Article  CAS  Google Scholar 

  12. K.G. Zolina, V.E. Kudryashov, A.N. Turkin, and A.E. Yunovich, MRS Internet J. Nitride Semicond. Res. 1, Art. 11 (1996).

    Google Scholar 

  13. H.C. Casey, Jr., J. Muth, S. Krishnankutty, and J.M. Zavada, Appl. Phys. Lett. 68, 2867 (1996).

    Article  CAS  Google Scholar 

  14. E.O. Kane, Solid-State Electron. 28, 3 (1985).

    Article  CAS  Google Scholar 

  15. P.G. Eliseev, M.A. Manko, A.I. Krasilnikov, and I.Z. Pinsker, Phys. Stat. Sol. 23, 587 (1968).

    Google Scholar 

  16. L. Robins, A.J. Paul, C.A. Parker, J.C. Roberts, S.M. Bedair, E.L. Piner, and N.A. El-Masry, MRS Internet J. Nitride Semicond. Res. 4S1, Article G3.22 (1999).

  17. B.D. Little, W. Shan, J.J. Song, Z.C. Feng, M. Schurman, and R.A. Stall, III-V Nitrides, ed. F.A. Ponce, T.D. Moustakas, I. Akasaki, and B.A. Monema (Pittsburgh, PA: Mater. Res. Soc., 1997), p. 823.

    Google Scholar 

  18. M. Osinski, P.G. Elissev, P. Perlin, V.A. Smagley, J. Furioli, and J.-H. Lee, Record of the 16th Electron. Mater. Symp. (Osaka, Japan: 1997), p. 273.

  19. M. Osinski, P. Perlin, P.G. Eliseev, J. Lee, and V.A. Smagley, Nitride Semiconductors 1997, Proc. of the 2nd International Conf. on Nitride Semiconductors, ed. K. Hiramatsu, K. Kishino, S. Nakamura, and H. Amano, Special Issue J. Cryst. Growth 189/190 (Amsterdam: North-Holland, 1998), p. 803.

    Google Scholar 

  20. S. Sakai, H. Sato, T. Sugahara, Y. Naoi, S. Kurai, K. Yamashita, S. Tottori, M. Hao, and K. Nishino, Mater. Science Forum 264, 1107 (1998).

    Article  Google Scholar 

  21. H. Sato, T. Sugahara, Y. Naoi, and S. Sakai, Jpn. J. Appl. Phys., Pt. 1 37, 2013 (1998).

    Article  CAS  Google Scholar 

  22. T. Sugahara, M. Hao, T. Wang, D. Nakagawa, Y. Naoi, K. Nishino, and S. Sakai, Jpn. J. Appl. Phys., Pt. 2 (Lett.), 37, L1195 (1998).

    Google Scholar 

  23. T. Wang, D. Nakagawa, M. Lachab, T. Sugahara, and S. Sakai, Appl. Phys. Lett. 74, 3128 (1999).

    Article  CAS  Google Scholar 

  24. S. Sakai, J. Korean Phys. Soc. 34, S220 (1999).

    Google Scholar 

  25. T. Sugahara, H. Sato, M. Hao, Y. Naoi, S. Kurai, S. Tottori, K. Yanashita, K. Nishino, L. Romano, and S. Sakai, Jpn. J. Appl. Phys., Pt. 2 (Lett.) 37, L398 (1998).

    Google Scholar 

  26. S.J. Rosner, E.C. Carr, M.J. Ludowise, G. Girolami, and H.I. Erikson, Appl. Phys. Lett. 70, 420 (1997).

    Article  CAS  Google Scholar 

  27. Y. Narukawa, S. Saijou, Y. Kawakami, S. Fujita, T. Mukai, and S. Nakamura, Appl. Phys. Lett. 74, 558 (1999).

    Article  CAS  Google Scholar 

  28. T. Taguchi, T. Maeda, Y. Yamada, S. Nakamura, and G. Shinomiya, Blue Laser and Light Emitting Diodes, ed. A. Yoshikawa, K. Kishino, M. Kobayashi, and T. Yasuda (Tokyo, Japan: Ohmsa, Ltd., 1996), p. 372.

    Google Scholar 

  29. K.L. Teo, J.S. Colton, P.Y. Yu, E.R. Weber, M.F. Li, W. Liu, K. Uchida, H. Tokunaga, N. Akutsu, and K. Matsumoto, Appl. Phys. Lett. 73, 1697 (1998).

    Article  CAS  Google Scholar 

  30. S. Chichibu, L. Sugiura, J. Nishio, A. Setoguchi, H. Nakanishi, and K. Itaya, Blue Laser and Light Emitting Diodes, ed. K. Onabe, K. Hiramatsu, K. Itaya, and Y. Nakano (Tokyo, Japan: Ohmsa, Ltd., 1998), p. 616.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, 87106, Albuquerque, NM

    Petr G. Eliseev, Marek Osinski & Jinhyun Lee

  2. Department of Electrical and Electronic Engineering, University of Tokushima, 2-1 Minami-josanjima, Tokushima, Japan

    Tomoya Sugahara & Shiro Sakai

  3. P.N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow, Russia

    Petr G. Eliseev

Authors
  1. Petr G. Eliseev
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Marek Osinski
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Jinhyun Lee
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Tomoya Sugahara
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Shiro Sakai
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Eliseev, P.G., Osinski, M., Lee, J. et al. Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1-xN grown on sapphire. J. Electron. Mater. 29, 332–341 (2000). https://doi.org/10.1007/s11664-000-0073-9

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-000-0073-9

Key words

Search

Navigation