Pattern formation during stationary heating and zone melting recrystallization of a silicon thin film

  • Won Tae Kim
  • Seong Gyoon Kim
  • Jae Sang Lee
  • Toshio Suzuki
Article
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Abstract

Solid/liquid (S/L) interface patterns during stationary heating and zone melting recrystallization (ZMR) of a Si thin film were calculated by using a phase-field model. The formation of an irregular S/L interface, solid particles in an undercooled liquid, and liquid droplets in a solid Si during stationary heating of the Si thin film could be interpreted by the difference in reflectivity between the solid and liquid Si, which results in the formation of undercooled liquid in front of the interface. The effects of the heater's scanning velocity and the radiation width during ZMR on the S/L interface pattern were calculated for a given interfacial energy anisotropy constant. An irregular, zigzag-shaped interface pattern was preferred at a lower scanning velocity and wider radiation zone. A regular, cellular S/L pattern can be obtained at a certain range of processing parameters. The cellular spacing increased by increasing either the heater's scanning velocity or the radiation width.

Keywords

Material Transaction Mushy Zone Liquid Droplet Polysilicon Stationary Heating 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© ASM International & TMS-The Minerals Metals and Materials Society 1999

Authors and Affiliations

  • Won Tae Kim
    • 1
    • 2
  • Seong Gyoon Kim
    • 1
    • 3
  • Jae Sang Lee
    • 4
  • Toshio Suzuki
    • 4
  1. 1.RASOMKorea
  2. 2.Department of PhysicsChongju UniversityChongjuKorea
  3. 3.Department of Materials Science and EngineeringKunsan National UniversityKunsanKorea
  4. 4.the Department of MetallurgyThe University of TokyoTokyoJapan

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