Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Ag/ZnMn2O4/p+-Si Device
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ZnMn2O4 thin films were deposited by a sol-gel technique onto a p+-Si substrate, and a RRAM device with the Ag/ZnMn2O4/p+-Si structure was fabricated. The microstructure of ZnMn2O4 films and the resistive switching behavior of Ag/ZnMn2O4/p+-Si device were investigated. ZnMn2O4 thin films had a spinel structure after annealing at 650 °C for 1 h. The Ag/ZnMn2O4/p+-Si device showed unipolar and/or bipolar resistive switching behavior, exhibiting different ION/IOFF ratio and switching endurance properties. In bipolar resistive switching, high-resistance-state (HRS) conduction was dominated by the space-charge-limited conduction mechanism, whereas the filament conduction mechanism dictated the low resistance state (LRS). For unipolar resistive switching, HRS and LRS were controlled by the filament conduction mechanism. For bipolar resistive switching, the conduction process can be explained by the space-charge region of the p-n junction.
Key wordsZnMn2O4 resistive switching behavior bipolar unipolar
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