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Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature

  • Pengfei Wang (汪鹏飞)
  • Hui Zhu (朱慧)Email author
  • Yingqiao Zhang
  • Shiwei Feng
  • Chunsheng Guo
  • Yamin Zhang
  • Xiao Meng
  • Qiong Qi
Advanced Materials

Abstract

The (001) oriented BiFeO3 thin film was deposited on the Nb: SrTiO3 substrate by radio frequency magnetron sputtering technology, and the bipolar resistive switching effect was observed in the BiFeO3/Nb: SrTiO3 heterostructure. The results showed that the ratio between the high resistance and low resistance was more than two orders at a reading pulse of -0.5 V and it exhibited excellent retention over 3600 s. The current density-voltage characteristic was dominated by the space-charge-limited conduction. The resistive switching effect of the structure was attributed to the trapping/detrapping of the charge carriers.

Key words

BiFeO3 films sputter bipolar resistive switching space-charge-limited conduction 

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Copyright information

© Wuhan University of Technology and Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  • Pengfei Wang (汪鹏飞)
    • 1
  • Hui Zhu (朱慧)
    • 1
    Email author
  • Yingqiao Zhang
    • 1
  • Shiwei Feng
    • 1
  • Chunsheng Guo
    • 1
  • Yamin Zhang
    • 1
  • Xiao Meng
    • 1
  • Qiong Qi
    • 2
  1. 1.Faculty of Information TechnologyBeijing University of TechnologyBeijingChina
  2. 2.National Engineering Research Center for Optoelectronics Devices, Institute of SemiconductorsChinese Academy of SciencesBeijingChina

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