Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature

  • Pengfei Wang (汪鹏飞)
  • Hui Zhu (朱慧)Email author
  • Yingqiao Zhang
  • Shiwei Feng
  • Chunsheng Guo
  • Yamin Zhang
  • Xiao Meng
  • Qiong Qi
Advanced Materials


The (001) oriented BiFeO3 thin film was deposited on the Nb: SrTiO3 substrate by radio frequency magnetron sputtering technology, and the bipolar resistive switching effect was observed in the BiFeO3/Nb: SrTiO3 heterostructure. The results showed that the ratio between the high resistance and low resistance was more than two orders at a reading pulse of -0.5 V and it exhibited excellent retention over 3600 s. The current density-voltage characteristic was dominated by the space-charge-limited conduction. The resistive switching effect of the structure was attributed to the trapping/detrapping of the charge carriers.

Key words

BiFeO3 films sputter bipolar resistive switching space-charge-limited conduction 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. [1]
    Waser R, Dittmann R, Staikov G,et al. Redox–Based Resistive Switching Memories–Nanoionic Mechanisms, Prospects, and Challenges[J]. Adv. Mater., 2009, 21: 2632–21 2632CrossRefGoogle Scholar
  2. [2]
    Wang L, Yang CH, and Wen J. Physical Principles and Current Status of Emerging Non–Volatile Solid State Memories[J]. Electron. Mater. Lett,. 2015, 11: 4 505–4 543CrossRefGoogle Scholar
  3. [3]
    Xia QF, Robinett W, Cumbie MW, et al. Memristor–CMOS Hybrid Integrated Circuits for Reconfigurable Logic[J]. Nano Lett., 2009, 9: 10 3640–10 3640Google Scholar
  4. [4]
    Hill NA. Why Are There So Few Magnetic Ferroelectrics[J]. J. Phys. Chem. B, 2000, 31: 49 6694–49 6709Google Scholar
  5. [5]
    Yang CH, Seidel J, Kim S Y, et al. Electric Modulation of Conduction in Multiferroic Ca–doped BiFeO3 Films[J]. Nature Materials, 2009, 8: 6 485–6 493Google Scholar
  6. [6]
    Wu SX, Ren LZ, Yu FM, et al. Colossal Resistance Switching in Pt/BiFeO3/Nb:SrTiO3 Memristor[J]. Appl. Phys. A, 2014, 116: 4 1741–4 1745Google Scholar
  7. [7]
    Hu ZQ, Li Q, Li MY, et al. Ferroelectric Memristor based on Pt/Bi–FeO3/Nb–Doped SrTiO3 Heterostructure[J]. Appl. Phys. Lett., 2013, 102: 10 076502–10 493Google Scholar
  8. [8]
    Zhu XJ, Zhu F, Li M, et al. Microstructure Dependence of Leakage and Resistive Switching Behaviours in Ce–Doped BiFeO3 Thin Films[J]. J. Phys. D: Appl. Phys. 2011, 44: 415104–415104CrossRefGoogle Scholar
  9. [9]
    Chen S W, Wu JM. Unipolar Resistive Switching Behavior of BiFeO3 Thin Films Prepared by Chemical Solution Deposition[J]. Thin Solid Films, 2010, 519: 1 499–1504Google Scholar
  10. [10]
    Tang XW, Zhu XB, Dai JM, et al. Evolution of the Resistive Switching in Chemical Solution Deposited–Derived BiFeO3 Thin Films with Dwell Time and Annealing Temperature[J]. J. Appl. Phys., 2013, 113: 4 403–4 403Google Scholar
  11. [11]
    Luo JM, Lin SP, Zheng Y, et al. Nonpolar Resistive Switching in Mn–Doped BiFeO3 Thin Films by Chemical Solution Deposition[J]. Appl. Phys. Lett., 2012, 101: 6 2032–6 2032Google Scholar
  12. [12]
    Zhang LX, Chen J, Cao JL, et al. Large Resistive Switching and Switchable Photovoltaic Response in Ferroelectric Doped Bi–FeO3–Based Thin Films by Chemical Solution Deposition[J]. J. Mater. Chem. C, 2015, 3: 18 4706–18 4712Google Scholar
  13. [13]
    Katiyar RK, Sharma Y, Barrionuevo Diestra DG, et al. Unipolar Resistive Switching in Planar Pt/BiFeO3/Pt Structure[J]. AIP Advances, 2015, 5: 3 103509–6350CrossRefGoogle Scholar
  14. [14]
    Lee D, Baek SH, Kim TH, et al. Polarity Control of Carrier Injection at Ferroelectric/Metal Interfaces for Electrically Switchable Diode and Photovoltaic Effect[J]. Phys. Rev. B, 2011, 84: 125305–125305CrossRefGoogle Scholar
  15. [15]
    Deng HL, Zhang M, Li T, et al. Magnetization and Resistance Switchings Induced by Electric Field in Epitaxial Mn:ZnO/BiFeO3 Multiferroic Heterostructures at Room Temperature[J]. ACS Appl. Mater. Interfaces, 2016, 8: 6–6CrossRefGoogle Scholar
  16. [16]
    Lee JH, Jeon JH, Yoon C, et al. Intrinsic Defect–Mediated Conduction and Resistive Switching in Multiferroic BiFeO3 Thin Films Epitaxially Grown on SrRuO3 Bottom Electrodes[J]. Appl. Phys. Lett., 2016, 108: 11 1062–11 1087Google Scholar
  17. [17]
    Jiménez D, Miranda E, Tsurumaki–Fukuchi A, et al. Multilevel Recording in Bi–Deficient Pt/BFO/SRO Heterostructures Based on Ferroelectric Resistive Switching Targeting High–Density Information Storage in Nonvolatile Memories[J]. Appl. Phys. Lett., 2013, 103: 26 2161–26 4597CrossRefGoogle Scholar
  18. [18]
    Jiang AQ, Wang C, Jin KJ, et al. A Resistive Memory in Semiconducting BiFeO3 Thin–Film Capacitors[J]. Adv. Mater. 2015, 23: 10 1277–10 1281Google Scholar
  19. [19]
    Shang DS, Wang Q, Chen LD, et al. Effect of Carrier Trapping on the Hysteretic Current–Voltage Characteristics in Ag/La0.7Ca0.3MnO3/Pt Heterostructure[J]. Phys. Rev. B, 2006, 73: 245427–245427CrossRefGoogle Scholar
  20. [20]
    Gao CX, Lv FZ, Zhang P, et al. Tri–State Bipolar Resistive Switching Behavior in a Hydrothermally Prepared Epitaxial BiFeO3 Film[J]. J. Alloys Compd. 2015, 649: 694–698CrossRefGoogle Scholar
  21. [21]
    Lee JH, Jeon JH, Yoon C, et al. Intrinsic Defect–Mediated Conduction and Resistive Switching in Multiferroic BiFeO3 Thin Films Epitaxially Grown on SrRuO3 Bottom Electrodes[J]. Appl. Phys. Lett., 2016, 108: 11 1062–11 1087Google Scholar
  22. [21]
    Yang H, Luo HM, Wang H, et al. Rectifying Current–Voltage Characteristics of BiFeO3/Nb–Doped SrTiO3 Heterojunction[J]. Appl. Phys. Lett., 2008, 92: 10 124–10 127Google Scholar
  23. [22]
    Qu TL, Zhao YG, Xie D, et al. Resistance Switching and White–Light Photovoltaic Effects in BiFeO3/Nb–SrTiO3 Heterojunctions[J]. Appl. Phys. Lett., 2011, 98: 17 1719–17 1719Google Scholar
  24. [23]
    Thakre A, Borkar H, Singha B P Kumar. A Electroforming Free High Resistance Resistive Switching of Graphene Oxide Modified Polar–PVDF[J]. RSC Adv., 2015, 5: 71 57406–71 57413CrossRefGoogle Scholar
  25. [24]
    Ni MC, Guo SM, Tian HF, et al. Electroforming Free High Resistance Resistive Switching of Graphene Oxide Modified Polar–PVDF[J]. Appl. Phys. Lett., 2007, 91: 183502–183502CrossRefGoogle Scholar
  26. [25]
    Chang ST, Lee JY. Electrical Conduction Mechanism in High–Dielectric–Constant (Ba–0.5,Sr–0.5)TiO3 Thin Films[J]. Appl. Phys. Lett., 2002, 80: 4 655–4 657Google Scholar
  27. [26]
    Zhang HJ, Zhang XP, Shi JP, Effect of Oxygen Content and Superconductivity on the Nonvolatile Resistive Switching in YBa2 Cu3 O6+x/Nb–Doped SrTiO3 Heterojunction[J]. Appl. Phys. Lett., 2009, 94: 9 833Google Scholar
  28. [27]
    Stolichnov I, Tagantsev A. Space–Charge Influenced–Injection Model for Conduction in Pb (Zrx Ti1−x)O3 Thin Films[J]. J. Appl. Phy., 1998, 84: 6 3216–6 3225CrossRefGoogle Scholar
  29. [28]
    Tang XG, Wang J, Zhang YW, et al. Leakage Current and Relaxation Characteristics of Highly (111)–Oriented Lead Calcium Titanate Thin Films[J]. J. Appl. Phys., 2003, 94: 8 5163–8 5166Google Scholar
  30. [29]
    Yan ZB, Liu JM. Coexistence of High Performance Resistance and Capacitance Memory Based on Multilayered Metal–Oxide Structures[J]. Sci. Rep., 2013, 3: 8 2482–8 2482Google Scholar
  31. [30]
    Deng HL, Zhang M, Wei JZ, et al. Nonvolatile Bipolar Resistive Switching in Ba–Doped BiFeO3 Thin Films[J]. Solid–State Electronics, 2015, 109: 72–75CrossRefGoogle Scholar
  32. [31]
    Liu WW, Jia CH, Zhang Q, et al. Mechanism of Rectification and Two–Type Bipolar Resistance Switching Behaviors of Pt/Pb(Zr0.52Ti0.48)O3 /Nb:SrTiO3[J]. J. Phys. D: Appl. Phys,. 2015, 48: 485102–485102CrossRefGoogle Scholar
  33. [32]
    Miranda E, Jimenez D, Tsurumaki–Fukuchi A, et al. Modeling of Hysteretic Schottky Diode–Like Conduction in Pt/BiFeO3/SrRuO3 Switches[J]. Appl. Phys. Lett., 2014, 105: 8 125305–8 1281CrossRefGoogle Scholar
  34. [33]
    Li H, Jin KX, Yang SH, et al. Ultraviolet Photovoltaic Effect in Bi–FeO3/Nb–SrTiO3 Heterostructure[J]. J. Appl. Phys., 2012, 112: 8 392–8 392Google Scholar

Copyright information

© Wuhan University of Technology and Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  • Pengfei Wang (汪鹏飞)
    • 1
  • Hui Zhu (朱慧)
    • 1
    Email author
  • Yingqiao Zhang
    • 1
  • Shiwei Feng
    • 1
  • Chunsheng Guo
    • 1
  • Yamin Zhang
    • 1
  • Xiao Meng
    • 1
  • Qiong Qi
    • 2
  1. 1.Faculty of Information TechnologyBeijing University of TechnologyBeijingChina
  2. 2.National Engineering Research Center for Optoelectronics Devices, Institute of SemiconductorsChinese Academy of SciencesBeijingChina

Personalised recommendations