Temperature Induces Self-assembly of Silicon Nano/Micro-structure based on Multi-physics Approach
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A three-dimensional dynamic model for nano/micro-fabrications of silicon was presented. With the developed model, the fabrication process of silicon on nothing (SON) structure was quantitatively investigated. We employ a diffuse interface model that incorporates the mechanism of surface diffusion. The mechanism of the fabrication is systematically integrated for high reliability of computational analysis. A semi-implicit Fourier spectral scheme is applied for high efficiency and numerical stability. Moreover, the theoretical analysis provides the guidance that is ordered by the fundamental geometrical design parameters to guide different fabrications of SON structures. The performed simulations suggest a substantial potential of the presented model for a reliable design technology of nano/micro-fabrications.
Key wordsnano/micro-structure phase field model silicon on nothing self-assembly
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- Sato T, Mitsutake K, Mizushima I, et al. Micro-structure Transformation of Silicon: A Newly Developed Transformation Technology for Patterning Silicon Surfaces Using the Surface Migration of Silicon Atoms by Hydrogen Annealing[J]. Japanese Journal of Applied Physics, 2000, 39(9A): 5033–5038CrossRefGoogle Scholar
- Mueller T, Dantz D, Ammon Wv, et al. Modeling of Morphological Changes by Surface Diffusion in Silicon Trenches[J]. Journal of The Electrochemical Society, 2006, 2(2): 363Google Scholar
- Zhang L, Kim S, Kim D. Multiphysics and Multiscale Analysis for Chemotherapeutic Drug[J]. Biomed Research International, 2015, 2015(12): 493985–493999Google Scholar
- Cahn J. Free Energy of a Nonuniform System.1. Interfacial Free Energy[J]. Journal of Chemical Physics, 1958, 28(2): 258–267Google Scholar