A Theoretical Study on the Influence of Carrier Generation on Drain-Source Current of Graphene Nanoscroll Transistors
- 17 Downloads
A novel approach is presented in order to study the effects of carrier generation on the drain-source current of graphene nanoscroll field effect transistors (GNSFET). In this method, ionisation carrier concentration is calculated and included in the drain-source current. In addition, a simulation approach based on Monte Carlo is employed in order to calculate ionisation coefficient. Finally, the current is calculated including ionisation and not including ionisation and compared together at different conditions in order to investigate the effect of ionisation. The results show that this mechanism is not ignorable in graphene-based transistors as it was in most cases in silicon transistors. In addition, the breakdown voltage has been calculated analytically and compared with fabrication results of couterparts in silicon technology.
KeywordsGraphene nanoscroll Modelling Field effect transistor Monte Carlo Carrier generation
- 2.Dai H (2001) Carbon nanotubes: synthesis, structure, properties, and applications. In: Topics in applied physics. Springer, BerlinGoogle Scholar
- 19.Fang T et al (2011) High-field transport in two-dimensional graphene. Phys Rev B 84:125450Google Scholar
- 21.Park W-D, Tanioka K (2014) Avalanche multiplication and impact ionization in amorphous selenium. Jpn J Appl Phys 53(3):1347–4065Google Scholar
- 28.Sun E et al (1978) Breakdown mechanism in short-channel MOS transistors. In: Electron devices meeting, 1978 International. IEEE. https://doi.org/10.1109/IEDM.1978.189459