Surface Plasmon Polariton Waveguide by Bottom and Top of Graphene
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Semiconductor surface plasmon polariton (SPP) waveguide has unique optical properties and compatibility with existing integrated circuit manufacturing technology; thus, SPP devices of semiconductor materials have wide application potential. In this study, a new integrated graphene SPP waveguide is designed using the bottom and top roles of graphene. Moreover, a T waveguide structure is designed by InGaAs of semiconductor gain, with rectangular GaAs material on both sides. The structure adopts light to stimulate the SPP, where its local area is enhanced by the interaction between two interface layers and a semiconductor gain and where its frequency can be adjusted by the thickness of the graphene. Characteristic analysis reveals the coupling between the T semiconductor gain and the SPP mode. The propagation distance of the waveguide can reach 75 cm, the effective mode field is approximately 0.0951λ 2, the minimum of gain threshold is approximately 2992.7 cm−1, and the quality factor (FOM) can reach 180. The waveguide structure which provides stronger localization can be compatible with several optical and electronic nanoscale components. That means, it can provide light for surface plasmon circuit and also can provide a great development in the low-threshold nanolaser.
KeywordsSemiconductor technology Graphene Waveguide Surface plasmon polariton Semiconductor gain
This work was supported by Guangxi Natural Science Foundation (2015GXNSFBA139257), National Natural Science Foundation of China (11562004), Guangxi Key Laboratory of Automatic Detecting Technology and Instruments (YQ16206), and Innovation Project of Guangxi Graduate Education (xycsz2017054).
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