Plasmonics

, Volume 7, Issue 1, pp 47–52

Short-Range Surface Plasmon Polaritons for Extraordinary Low Transmission Through Ultra-Thin Metal Films with Nanopatterns

Article

DOI: 10.1007/s11468-011-9274-8

Cite this article as:
Gan, Q., Bai, W., Jiang, S. et al. Plasmonics (2012) 7: 47. doi:10.1007/s11468-011-9274-8

Abstract

We provide both experimental and theoretical investigation on extraordinary low transmission through one-dimensional nanoslit and two-dimensional nanohole arrays on ultra-thin metal films. Unambiguous proofs demonstrate that short-range surface plasmon polaritons play a key role leading to this novel phenomenon, which could be useful for creating new polarization filters and other integrated plasmonic components.

Keywords

Plasmons Surface waves Ultra-thin metal films Waveguides 

Supplementary material

11468_2011_9274_MOESM1_ESM.doc (134 kb)
Fig. S1The setup of the transmission measurement system based on an inverted microscope (Olympus IX81). A Xenon lamp is used as the light source. The transmission light is collected by a ×40 objective lens with a numerical aperture of 0.6. A diaphragm is used to confine the observation area. The collected light is coupled into a multimode fiber bundle interfaced with a compact spectrometer (Ocean Optics USB 4000) (DOC 134 kb)
11468_2011_9274_MOESM2_ESM.doc (430 kb)
Fig. S2a Measured TE transmission spectra through the nanopatterned metal film characterized in Fig. 2. b Numerical simulation of the TE transmission the sample. We believe that the difference between the experiment and modeling results is introduced by the nonparallel incident light employed in the microscope imaging system. In addition, nanofabrication error and surface roughness of the sample should also play an important role in the observation, which cannot be considered completely in the numerical modeling (DOC 430 kb)

Copyright information

© Springer Science+Business Media, LLC 2011

Authors and Affiliations

  1. 1.Electrical and Computer Engineering DepartmentLehigh UniversityBethlehemUSA
  2. 2.Department of Electrical EngineeringUniversity at Buffalo, The State University of New YorkBuffaloUSA
  3. 3.Institute of SemiconductorsChinese Academy of SciencesBeijingChina
  4. 4.Department of Materials ScienceFudan UniversityShanghaiChina
  5. 5.Hewlett-Packard LaboratoriesHewlett-Packard CompanyPalo AltoUSA

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