Plasmonics

, Volume 6, Issue 2, pp 319–325

Optimization of Optoelectronic Plasmonic Structures

  • Hengliang Wang
  • Zhenghua An
  • Che Qu
  • Shiyi Xiao
  • Lei Zhou
  • Susumu Komiyama
  • Wei Lu
  • Xuechu Shen
  • Paul K. Chu
Article

DOI: 10.1007/s11468-011-9207-6

Cite this article as:
Wang, H., An, Z., Qu, C. et al. Plasmonics (2011) 6: 319. doi:10.1007/s11468-011-9207-6

Abstract

We discuss the interplay between surface plasmon polaritons (SPPs) and localized shape resonances (LSRs) in a plasmonic structure working as a photo-coupler for a GaAs quantum well photodetector. For a targeted electronic inter-subband transition inside the quantum well, maximum photon absorption is found by compromising two effects: the mode overlapping with incident light and the lifetime of the resonant photons. Under the optimal conditions, the LSR mediates the coupling between the incident light and plasmonic structure while the SPP provides long-lived resonance which is limited ultimately by metal loss. The present work provides insight to the design of plasmonic photo-couplers in semiconductor optoelectronic applications.

Keywords

Surface plasmon polariton Localized shape resonance Extraordinary optical transmission Inter-subband transition 

Copyright information

© Springer Science+Business Media, LLC 2011

Authors and Affiliations

  • Hengliang Wang
    • 1
  • Zhenghua An
    • 1
  • Che Qu
    • 1
  • Shiyi Xiao
    • 1
  • Lei Zhou
    • 1
  • Susumu Komiyama
    • 2
  • Wei Lu
    • 3
  • Xuechu Shen
    • 1
    • 3
  • Paul K. Chu
    • 4
  1. 1.Institute of Advanced Materials and State Key Laboratory of Surface PhysicsFudan UniversityShanghaiPeople’s Republic of China
  2. 2.Department of Basic ScienceUniversity of TokyoTokyoJapan
  3. 3.National Laboratory for Infrared Physics, Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghaiPeople’s Republic of China
  4. 4.Department of Physics and Materials ScienceCity University of Hong KongHong KongChina

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