Ferroelectric polarization reversal tuned by magnetic field in a ferroelectric BiFeO3/Nb-doped SrTiO3 heterojunction
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Interfacial resistive switching of a ferroelectric semiconductor heterojunction is highly advantageous for the newly developed ferroelectric memristors. Moreover, the interfacial state in the ferroelectric semiconductor heterojunction can be gradually modified by polarization reversal, which may give rise to continuously tunable resistive switching behavior. In this work, the interfacial state of a ferroelectric BiFeO3/Nb-doped SrTiO3 junction was modulated by ferroelectric polarization reversal. The dynamics of surface screening charges on the BiFeO3 layer was also investigated by surface potential measurements, and the decay of the surface potential could be speeded up by the magnetic field. Moreover, ferroelectric polarization reversal of the BiFeO3 layer was tuned by the magnetic field. This finding could provide a method to enhance the ferroelectric and electrical properties of ferroelectric BiFeO3 films by tuning the magnetic field.
Keywordsferroelectric semiconductor heterojunction ferroelectric polarization reversal pulsed laser deposition Kelvin probe force microscopy
This work was supported by the National Natural Science Foundation of China (Grant No. 11574365).
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