Frontiers of Physics in China

, Volume 1, Issue 1, pp 117–121 | Cite as

A Study on the Components of MgB2 Thick Film Prepared via HPCVD

  • Jia Zhang 
  • Guo Jing-pu 
  • Lu Ying 
  • Wang Xin-feng 
  • Chen Chin-ping 
  • Xu Jun 
  • Wang Xiao-nan 
  • Zhu Meng 
  • Feng Qing-rong 
Research Article

Abstract

Superconducting MgB2 thick film has been prepared via hybrid physical-chemical vapor deposition method on Al2O3 (0001) substrate by using B2H6 and magnesium ingot as raw materials reacted from 730 to 830°C for 40 min under 20 to 30 kPa. Its thickness is about 40 µm. The MgB2 thick film shows Tc (onset) = 39.0 K and Tc (0) = 37.2 K. X-ray diffraction pattern shows that the film grown along (101) direction has small amount of impurities of Mg and MgO. Scanning electron microscopy and energy dispersive X-ray spectroscopy indicated that these impurities existed indeed and were Mg rich. The MgO film was formed on the surface of the MgB2 thick film to further protect the sample from oxidation. We presented a new mechanism for the formation of the thick film.

Keywords

MgB2 film SEM image EDX X-ray diffraction pattern 

PACS numbers

74.62.Bf 74.70.Ad 74.78.-w 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Nagamatsu J., Nakagawa N., Muranaka T., Zenitani Y. and Akimitsu J., Nature, 2001, 410: 63CrossRefADSGoogle Scholar
  2. 2.
    Gurevich A., Patnaik S., Braccini V., Kim K.-H., Mielke C., Song X., Cooley L.-D., Bu S.-D., Kim D.-M., Choi J.-H., Belenky L.-J., Giencke J., Lee M.-K., Tian W., Pan X.-Q., Siri A., Hellstrom E. E., Eom C. B. and Larbalestier D. C., Supercond. Sci. Technol., 2004, 17: 278CrossRefADSGoogle Scholar
  3. 3.
    Glowacki B.-A., Majoros M., Vickers M., Evetts J.-E., Shi Y. and Mcdougall I., Supercond. Sci. Technol., 2002, 14: 193ADSGoogle Scholar
  4. 4.
    Canfield P.-C., Finnemore D.-K., Budko S.-L., Ostenson J.-E., Lapertot G., Cunningham C.-E. and Petrovic C., Phys. Rev. Lett., 2001, 86(11): 2423CrossRefADSGoogle Scholar
  5. 5.
    Feng Q.-R., Xu J., Guo J.-D., Wang X., Xiong G.-C., Gao Z.-X., Xu H.-Q., She D.-L., Cai S., Li Z.-Y. and Dong Y., Chin. J. Low Temp. Phys., 2001, 24(2): 96Google Scholar
  6. 6.
    Wang S.-F., Zhou Y.-L., Zhu Y.-B., Zhang Q., Liu Z., Chen Z.-H., Lu H.-B., Dai Y.-S. and Yang G.-Z., Physica C, 2003, 390: 6ADSGoogle Scholar
  7. 7.
    Eom C.-B., Lee M.-K., Choi J.-H., Belenky L.-J., Song X., Cooley L.-D., Naus M.-T., Patnaik S., Jiang J., Rikel M., Polyanskii A., Curevich A., Cai X.-Y., Bu S.-D., Babcook S.-E, Hellstrom E.-E., Larbalestier D.-C., Rogado N., Regan K.-A., Hayward M.-A., He T., Slusky J.-S., Inumaru K., Hass M.-K. and Cava R.-J., Nature (Lond.), 2001, 411: 558CrossRefADSGoogle Scholar
  8. 8.
    Kang W.-N., Kim H.-J., Choi E.-M., Jung U.-C. and Lee S.-I., Science, 2001, 292: 1521ADSGoogle Scholar
  9. 9.
    Moon S.-H., Yun J.-H., Lee H.-N., Kye J.-I., Kim H.-G., Chung W. and Oh B., Appl. Phys. Lett., 2001, 79: 2429ADSGoogle Scholar
  10. 10.
    Bu S.-D., Kim D.-M., Choi J.-H., Giencke J., Hellstrom E.-E., Larbalestier D.-C., Patnaik S., Cooley L., Eom C.-B., Lettieri J., Schlom D.-G., Tian W. and Pan X.-Q., Appl. Phys. Lett., 2002, 81: 1851CrossRefADSGoogle Scholar
  11. 11.
    Liu Z.-K., Schlom D.-G., Li Q. and Xi X.-X., Appl. Phys. Lett., 2001, 78: 3678ADSGoogle Scholar
  12. 12.
    Jo W., Huh J.-U., Ohnishi T., Marshall A.-F., Beasley M.-R. and Hammond R.-H., Appl. Phys. Lett., 2002, 80: 3563ADSGoogle Scholar
  13. 13.
    Zeng X.-H., Pogrebnyakov A.-V., Kotcharov A., Jones J., Xi X.-X., Lysczek E., Redwing J.-M., Xu S., Li Q., Littieri J., Schlom D.-G., Tian W., Pan X. and Liu Z.-K., Nat. Matters, 2002, 1: 35Google Scholar
  14. 14.
    Liu Z.-B., Song X.-F., Wang Y.-Z. and Wang Z.-X., Chin. J. Low Temp. Phys., 2003, 25: 71Google Scholar
  15. 15.
    Pan C.-H. and Zhao L.-Z., The Basic of Electron Energy Spectrum, Beijing: Scientific Press, 1981, 59Google Scholar
  16. 16.
    Shiraiwa T., Fujino N. and Murayama J. (eds.) In: Proc. 6th Intl. Conf. on X-Ray Optics and Microanalysis, Tokyo: Univ. Tokyo Press, 1972, 213Google Scholar
  17. 17.
    Eyidi D., Eibl O., Wenzel T., Nickel K.-G., Schlachter S.-I. and Goldacker W., Supercond. Sci. Technol., 2003, 16: 778–788CrossRefADSGoogle Scholar
  18. 18.
    Yang D.-L., Sun H.-W., Lu H.-X., Guo Y.-Q., Li X.-J. and Hu X., Supercond. Sci. Technol., 2003, 16: 576–581ADSGoogle Scholar
  19. 19.
    Yan Y.-F. and Al-Jassim M.-M., Phys. Rev., B, 2003, 67: 212503ADSGoogle Scholar
  20. 20.
    Liao X.-Z., Serquis A.-C., Zhu Y.-T., Huang J.-Y., Peterson D.-E., Mueller F.-M. and Xu H.-F., Appl. Phys. Lett., 2002, 80: 4398CrossRefADSGoogle Scholar
  21. 21.
    Klie R.-F., Idrobo J.-C., Browning N.-B., Serquis A., Zhu Y.-T., Liao X.-Z. and Mueller F.-M., Appl. Phys. Lett., 2002, 80: 3970CrossRefADSGoogle Scholar
  22. 22.
    Zeng X.-H., Sukiasyan A., Xi X.-X., Hu Y.-F., Werta E., Tian W., Sun H.-P., Pan X.-Q., Lettieri J., Schlom D.-G., Brubaker C.-O., Liu Z.-K. and Li Q., Appl. Phys. Lett., 2001, 79: 1840ADSGoogle Scholar
  23. 23.
    Berenov A., Lockman Z., Qi X., MacManus-Driscoll J.-L., Bugoslavsky Y., Cohen L.-F., Jo M.-H., Stelmashenko N.-A., Tsaneva V.-N., Kambara M., Hari Babu N., Cardwell D.-S. and Blamire M.-G., Appl. Phys. Lett., 2002, 79: 4001ADSGoogle Scholar
  24. 24.
    Canfield P.-C., Finnemore D.-K., Bud'ko S.-L., Ostenson J.-E., Lapertor G., Cuningham C.-E. and Petrovic C., Phys. Rev. Lett., 2001, 86: 2423CrossRefADSGoogle Scholar
  25. 25.
    Serquis A., Zhu Y.-T., Peterson D.-E., Mueller F.-M., Schulze R.-K., Nesterenko V.-F. and Indrakanti S.-S., Appl. Phys. Lett., 2001, 80: 4401Google Scholar

Copyright information

© Higher Education Press and Springer-Verlag 2006

Authors and Affiliations

  • Jia Zhang 
    • 1
  • Guo Jing-pu 
    • 1
  • Lu Ying 
    • 1
  • Wang Xin-feng 
    • 1
  • Chen Chin-ping 
    • 1
  • Xu Jun 
    • 1
  • Wang Xiao-nan 
    • 1
  • Zhu Meng 
    • 1
  • Feng Qing-rong 
    • 1
  1. 1.School of Physics and State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsPeking UniversityBeijingChina

Personalised recommendations