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Chinese Science Bulletin

, Volume 58, Issue 30, pp 3617–3623 | Cite as

Effect of TMGa flux on GaN films deposited on Ti coated on glass substrates at low temperature

  • EnPing Wang
  • JiMing Bian
  • FuWen Qin
  • Dong Zhang
  • YueMei Liu
  • Yue Zhao
  • ZhongWei Duan
  • Shuai Wang
Open Access
Article Condensed Matter Physics
First Online:
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Abstract

Highly c-axis-oriented GaN films were deposited on Ti coated glass substrates using low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) with trimethyl gallium (TMGa) as gallium source. The influence of TMGa flux on the properties of GaN films were systematically investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), atomic force microscopy (AFM) and Raman scattering. The GaN film with small surface roughness and high c-axis preferred orientation was successfully achieved at the optimized TMGa flux of 1.0 sccm. The ohmic contact characteristic between GaN and Ti layer was clearly demonstrated by the near-linear current-voltage (I–V) curve. The GaN/Ti/glass structure has great potential to dramatically improve the scalability and reduce the cost of solid-state lighting light emitting diodes.

Keywords

GaN low-temperature deposited glass substrates Ti film ECR-PEMOCVD 
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Copyright information

© The Author(s) 2013

Authors and Affiliations

  • EnPing Wang
    • 1
    • 2
  • JiMing Bian
    • 1
    • 3
  • FuWen Qin
    • 1
    • 2
  • Dong Zhang
    • 1
    • 2
  • YueMei Liu
    • 1
    • 2
  • Yue Zhao
    • 1
    • 2
  • ZhongWei Duan
    • 1
    • 2
  • Shuai Wang
    • 1
    • 2
  1. 1.School of Physics and Optoelectronic TechnologyDalian University of TechnologyDalianChina
  2. 2.Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education)Dalian University of TechnologyDalianChina
  3. 3.Key Laboratory of Inorganic Coating MaterialsChinese Academy of SciencesShanghaiChina

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