Chinese Science Bulletin

, Volume 59, Issue 15, pp 1696–1708 | Cite as

Microstructure-based multiphysics modeling for semiconductor integration and packaging

  • Zhiheng Huang
  • Hua Xiong
  • Zhiyong Wu
  • Paul Conway
  • Hugh Davies
  • Alan Dinsdale
  • Yunfei En
  • Qingfeng Zeng
Review Materials Science
First Online:
Received:
Accepted:

Abstract

Semiconductor technology and packaging is advancing rapidly toward system integration where the packaging is co-designed and co-manufactured along with the wafer fabrication. However, materials issues, in particular the mesoscale microstructure, have to date been excluded from the integrated product design cycle of electronic packaging due to the myriad of materials used and the complex nature of the material phenomena that require a multiphysics approach to describe. In the context of the materials genome initiative, we present an overview of a series of studies that aim to establish the linkages between the material microstructure and its responses by considering the multiple perspectives of the various multiphysics fields. The microstructure was predicted using thermodynamic calculations, sharp interface kinetic models, phase field, and phase field crystal modeling techniques. Based on the predicted mesoscale microstructure, linear elastic mechanical analyses and electromigration simulations on the ultrafine interconnects were performed. The microstructural index extracted by a method based on singular value decomposition exhibits a monotonous decrease with an increase in the interconnect size. An artificial neural network-based fitting revealed a nonlinear relationship between the microstructure index and the average von Mises stress in the ultrafine interconnects. Future work to address the randomness of microstructure and the resulting scatter in the reliability is discussed in this study.

Keywords

Materials Genome Initiative Semiconductor integration and packaging Microstructure Reliability Multiphysics modeling 
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Notes

Acknowledgments

This work was supported by the National Natural Science Foundation of China (51004118), the Pearl River New Science Star Program of Guangzhou (2012J2200074), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry (30000-4105346), the 100 Talents Program of Sun Yat-sen University, and the Basic Research Foundation of Northwestern Polytechnical University (JCY20130114). The authors acknowledge Robinson Jim of the National Physical Laboratory for conducting the calculations in MTDATA and plotting Fig. 1. Technical supports from Dr. Gang Wang of CnTech on various issues of COMSOL Multiphysics are also gratefully acknowledged.

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Copyright information

© Science China Press and Springer-Verlag Berlin Heidelberg 2014

Authors and Affiliations

  • Zhiheng Huang
    • 1
  • Hua Xiong
    • 1
  • Zhiyong Wu
    • 1
  • Paul Conway
    • 2
  • Hugh Davies
    • 3
  • Alan Dinsdale
    • 3
  • Yunfei En
    • 4
  • Qingfeng Zeng
    • 5
  1. 1.School of Physics and EngineeringSun Yat-sen UniversityGuangzhouChina
  2. 2.Wolfson School of Mechanical and Manufacturing EngineeringLoughborough UniversityLoughboroughUK
  3. 3.National Physical LaboratoryTeddingtonUK
  4. 4.China Electronic Produce Reliability and Environmental Testing Research InstituteGuangzhouChina
  5. 5.School of Materials Science and EngineeringNorthwestern Polytechnical UniversityXi’anChina

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