Chinese Science Bulletin

, Volume 57, Issue 27, pp 3556–3559

An ultralow-energy negative cluster ion beam system and its application in preparation of few-layer graphene

  • ZeSong Wang
  • ZaoDi Zhang
  • Rui Zhang
  • ShiXu Wang
  • DeJun Fu
  • JiaRui Liu
Open Access
Letter High-Energy Physics

DOI: 10.1007/s11434-012-5397-3

Cite this article as:
Wang, Z., Zhang, Z., Zhang, R. et al. Chin. Sci. Bull. (2012) 57: 3556. doi:10.1007/s11434-012-5397-3

Abstract

We developed a cluster ion beam system that produces negative cluster beams of C1–C10 with ion current of 4.5 nA-50 μA at extraction voltages ranging from 6 to 20 kV. The system uses the injector of a tandetron accelerator and was established by inserting an electrostatic scanner on its ion-optical line and modifying its Faraday cup into a substrate holder. Utilization of clusters enables ultrashallow ion implantation at energies as low as 600 eV/atom without deceleration. Small carbon clusters C2 and C4 were implanted into Ni/SiO2/Si substrates and following post-thermal treatment graphene was obtained. Raman spectroscopy showed characteristic 2D peaks with G-to-2D peak ratios revealing formation of 2–3 layers of graphene. The Raman data reveals clear effect of nonlinear cluster-surface interaction in ion beam synthesis of two-dimensional nanomaterials.

Keywords

ultralow energy cluster beam negative ion ultrashallow implantation grapheme Raman scattering 

Copyright information

© The Author(s) 2012

Authors and Affiliations

  • ZeSong Wang
    • 1
  • ZaoDi Zhang
    • 1
  • Rui Zhang
    • 1
  • ShiXu Wang
    • 1
  • DeJun Fu
    • 1
  • JiaRui Liu
    • 1
    • 2
  1. 1.Key Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education of China, School of Physics and TechnologyWuhan UniversityWuhanChina
  2. 2.Texas Center for SuperconductivityUniversity of HoustonHoustonUSA

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