Chinese Science Bulletin

, Volume 55, Issue 14, pp 1372–1375 | Cite as

Synthesis of high quality type-Ib diamond crystals in carats grade

  • HongYu Xiao
  • XiaoPeng Jia
  • HongAn Ma
  • ShangSheng Li
  • Yong Li
  • Ming Zhao
Articles Condensed Matter Physics
First Online:
Received:
Accepted:

Abstract

High quality type-Ib tower-shape gem-diamond crystals in carats grade were synthesized in cubic anvil high pressure apparatus (SPD-6×1200) at 5.4 GPa and 1250–1450°C. The relationship between the growth time and the weight of growth diamond has been gained. The faces of {110} and {113} were found in the synthetic diamond crystals frequently. We found that the relative growth rate of {113} face was descending with the increase of growth temperature, and that of {110} face had no obvious change with the increase of the growth temperatures and the growth time. In the work, the crystal defects were studied carefully, and the reasons for the appearance of the defects were also obtained. Some diamond crystals have been polished into the anvil of DAC (Diamond Anvil Cell) and the diamond jewelry. Compared with natural diamond crystal, synthetic diamond crystal has the merits such as small grinding quantity, low cost, etc., so it can be widely used in super high pressure field and gemstone industry.

Keywords

diamond high pressure and high temperature carat 
This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Sumiya H, Toda N, Satoh S. Growth rate of high-quality large diamond crystals. J Crystal Growth, 2002, 237–239: 1281–1285CrossRefGoogle Scholar
  2. 2.
    Li L, Xu B, Li M S. Analysis of the carbon source for diamond crystal growth. Chinese Sci Bull, 2008, 53: 937–942CrossRefGoogle Scholar
  3. 3.
    Xu B, Li M S, Yin L W, et al. Microstructures of metallic film and diamond growth from Fe-Ni-C system. Chinese Sci Bull, 2002, 47: 1258–1262CrossRefGoogle Scholar
  4. 4.
    Tian Y, Jia X P, Zang C Y, et al. Dependence of nitrogen concentration in type Ib diamonds on synthesis temperature. Chinese Sci Bull, 2009, 54: 1459–1462CrossRefGoogle Scholar
  5. 5.
    Zhou S G, Zang C Y, Ma H A, et al. Study on growth of coarse grains of diamond with high quality under HPHT. Chinese Sci Bull, 2009, 54: 163–167CrossRefGoogle Scholar
  6. 6.
    Zhang Q L, Yin S T, Sun D L, et al. Segregation during crystal growth from melt and absorption cross section determination by optical absorption method. Sci China Ser G-Phys Mech Astron, 2008, 51: 481–491CrossRefGoogle Scholar
  7. 7.
    Li H D, Zou G T, Jin Z S, et al. High-rate growth and nitrogen distribution in homoepitaxial chemical vapour deposited single-crystal diamond. Chin Phys Lett, 2008, 25: 1803–1806CrossRefGoogle Scholar
  8. 8.
    Liu F B, Wang J D, Liu B, et al. Electronic structures of the oxygenated diamond (100) surfaces. Chinese Sci Bull, 2006, 51: 2437–2443CrossRefGoogle Scholar
  9. 9.
    Yu S J, Jin Z S, Zou G T, et al. Selective deposition of diamond films by thermal CVD of tungsten filament. Chinese Sci Bull, 1991, 36: 1438Google Scholar
  10. 10.
    Cai R Q, Chen G H, Song X M, et al. Field electron emission of diamond films on nanocrystalline diamond coating by CVD method. Chinese Sci Bull, 2003, 48: 1934–1937Google Scholar
  11. 11.
    Tian Y, Jia X P, Zang C Y, et al. Finite element analysis of convection in growth cell for diamond growth using Ni-based solvent. Chin Phys Lett, 2009, 26: 28104CrossRefGoogle Scholar
  12. 12.
    Wentorf R H Jr. Some studies of diamond growth rates. J Phys Chem, 1971, 75: 1833–1837CrossRefGoogle Scholar
  13. 13.
    Burns R C, Hansen J O, Spits R A, et al. Growth of high purity large synthetic diamond crystals. Diamond Relat Mater, 1999, 8: 1433–1437CrossRefGoogle Scholar
  14. 14.
    Strong H M, Chrenko R M. Further studies on diamond growth rates and physical properties of laboratory-made diamond. J Phys Chem, 1971, 75: 1838–1843CrossRefGoogle Scholar
  15. 15.
    Sun J, Bai Y Z, Sun J C, et al. Structural and electrical properties of ZnO films on freestanding thick diamond films. Chinese Sci Bull, 2008, 53: 2931–2934CrossRefGoogle Scholar
  16. 16.
    Isoya J, Kanda H, Akaishi M, et al. ESR studies of incorporation of phosphorus into high-pressure synthetic diamond. Diamond Relat Mater, 1997, 6: 356–360CrossRefGoogle Scholar
  17. 17.
    Sun L L, Wu T J, Wang W K, et al. Phase transition in Pd40Ni10Cu30P20 bulk metallic glass under HPHT. Sci China Ser G-Phys Mech Astron, 2005, 48: 716–722CrossRefGoogle Scholar
  18. 18.
    Xiao H Y, Jia X P, Zang C Y, et al. Dependence of crystal quality and β value on synthesis temperature in growing gem diamond crystals. Chin Phys Lett, 2008, 25: 1469–1471CrossRefGoogle Scholar

Copyright information

© Science in China Press and Springer Berlin Heidelberg 2010

Authors and Affiliations

  • HongYu Xiao
    • 1
  • XiaoPeng Jia
    • 1
  • HongAn Ma
    • 1
  • ShangSheng Li
    • 1
  • Yong Li
    • 1
  • Ming Zhao
    • 1
  1. 1.State Key Laboratory of Superhard MaterialsJilin UniversityChangchunChina

Personalised recommendations