Science China Physics, Mechanics & Astronomy

, Volume 57, Issue 6, pp 1206–1208

Double-peaked decay of transient photovoltage in nanoporous ZnO/n-Si photodetector


DOI: 10.1007/s11433-014-5459-4

Cite this article as:
Liu, H., Fu, C. & Zhao, K. Sci. China Phys. Mech. Astron. (2014) 57: 1206. doi:10.1007/s11433-014-5459-4


In the present work, a nanoporous ZnO/n-Si structure has been proposed as a new type infrared photodetector. Triggered by one laser pulse with wavelength of 1064 nm, this structure exhibits a double-peak decay of transient photovoltage. Also, the time interval between these two peaks increases linearly with the increase of irradiated pulsed energy, indicating the promising application of this hetero-junction in photo-energy detection of infrared pulsed laser. A possible mechanism for this particular photoresponse has been discussed.


ZnO sol-gel photovoltage photodetector 

Copyright information

© Science China Press and Springer-Verlag Berlin Heidelberg 2014

Authors and Affiliations

  1. 1.State Key Laboratory of Petroleum Resources and ProspectingChina University of PetroleumBeijingChina
  2. 2.Key Laboratory of Oil and Gas Terahertz Spectroscopy and Photoelectric DetectionChina Petroleum and Chemical Industry Federation (CPCIF)BeijingChina

Personalised recommendations