Double-peaked decay of transient photovoltage in nanoporous ZnO/n-Si photodetector
In the present work, a nanoporous ZnO/n-Si structure has been proposed as a new type infrared photodetector. Triggered by one laser pulse with wavelength of 1064 nm, this structure exhibits a double-peak decay of transient photovoltage. Also, the time interval between these two peaks increases linearly with the increase of irradiated pulsed energy, indicating the promising application of this hetero-junction in photo-energy detection of infrared pulsed laser. A possible mechanism for this particular photoresponse has been discussed.
KeywordsZnO sol-gel photovoltage photodetector
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