Valence electronic structure of tantalum carbide and nitride

  • Fan ChangZeng 
  • Sun LiLing 
  • Wei ZunJie 
  • Ma Mingzhen 
  • Liu RiPing 
  • Zeng SongYan 
  • Wang WenKui 
Article

Abstract

The valence electronic structures of tantalum carbide (TaC) and tantalum nitride (TaN) are studied by using the empirical electronic theory (EET). The results reveal that the bonds of these compounds have covalent, metallic and ionic characters. For a quantitative analysis of the relative strength of these components, their ionicities have been calculated by implanting the results of EET to the PVL model. It has been found that the ionicity of tantalum carbide is smaller than that of tantalum nitride. The EET results also reveal that the covalent electronic number of the strongest bond in the former is larger than that of the latter. All these suggest that the covalent bond of TaC is stronger than that of TaN, which coincides to that deduced from the first-principles method.

Keywords

TaC TaN valence electronic structure ionicity 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Storms, E K. the Refractory Carbides. New York: Academic, 1967, 1–56Google Scholar
  2. 2.
    Toth, L E. Transition Metal Carbides and Nitrides. New York: Academic. 1971, 1–87Google Scholar
  3. 3.
    Grossman, J C, Mizel A, Cote M, et al. Transition metals and their carbides and nitrides: Trends in electronic and structural properties. Phys Rev B, 1999, 60: 6343–6347CrossRefADSGoogle Scholar
  4. 4.
    Jhi S H, Ihm J, Louie S G, et al. Electronic mechanism of hardness enhancement in transition-metal carbonitrides. Nature, 1999, 399: 130–132CrossRefADSGoogle Scholar
  5. 5.
    Simunek A, Vackar J. Correlation between core-level shift and bulk modulus in transition-metal carbides and nitrides. Phys Rev B, 2001, 64: 235115-1–6Google Scholar
  6. 6.
    Vackar J, Simunek A. Adaptability and accuracy of all-electron pseudopotentials. Phys Rev B, 2003, 67: 125113-1–9Google Scholar
  7. 7.
    Zaoui A, Bouhafs B, Ruterana P. First-principles calculations on the electronic structure of TiCxN1−x, ZrxNb1−xC, HfCxN1−x alloys. Mater Chem Phys, 2005, 91: 108–115CrossRefGoogle Scholar
  8. 8.
    Zaoui A, Kacimi S, Bouhafs B. First-principles study of bonding mechanisms in the series of Ti, V, Cr, Mo, and their carbides and nitrides. Phys B, 2005, 358: 63–71CrossRefADSGoogle Scholar
  9. 9.
    Chen X J, Struzhkin V V, Wu, Z G, et al. Hard superconducting nitrides. Proc Natl Acad Sci USA, 2005, 102: 3198–3203CrossRefADSGoogle Scholar
  10. 10.
    Wu Z G, Chen X J, Struzhkin V V, et al. Trends in elasticity and electronic structure of transition-metal nitrides and carbides from first priciples. Phys Rev B, 2005, 71: 214103-1–5Google Scholar
  11. 11.
    Krajewski A, D’Alessio L, de Maria D. Physico-chemical and thermophysical properties of cubic binary carbides. Crystal Res Technol, 1998, 33: 341–374CrossRefGoogle Scholar
  12. 12.
    Levy F, Hones P, Schmid P E, et al. Electronic states and mechanical properties in transition metal nitrides. Surf Coat Technol, 1999, 120–121: 284–290CrossRefGoogle Scholar
  13. 13.
    Tsai M H, Sun S C, Tsai C E, et al. Comparison of the diffusion barrier properties of chemical-vapor-deposited TaN and sputtered TaN between Cu and Si. J Appl Phys, 1996, 79: 6932–6938CrossRefADSGoogle Scholar
  14. 14.
    Stavrev M, Fischer D, Praessler F, et al. Behavior of thin Ta-based films in the Cu/barrier/Si system. J Vac Sci Tech A, 1999, 17: 993–1001CrossRefADSGoogle Scholar
  15. 15.
    Rosenberg R, Edelstein D C, Hu C K, et al. Copper metallization for high performance silicon technology. Annu Rev Mater Sci, 2000, 30: 229–262CrossRefGoogle Scholar
  16. 16.
    Angelkort C, Berendes A, Lewalter, H, et al. Formation of tantalum nitride films by rapid thermal processing. Thin Solid Films, 2003, 437: 108–115CrossRefADSGoogle Scholar
  17. 17.
    Lopez-de-la-Torre L, Winkler B, Schreuer J, et al. Elastic properties of tantalum carbide (TaC). Solid State Comm, 2005, 134: 245–250CrossRefADSGoogle Scholar
  18. 18.
    Stampfl C, Freeman A J. Stable and metastable structures of the multiphase tantalum nitride system. Phys Rev B, 2005, 71: 024111-1–5Google Scholar
  19. 19.
    Sahnoun M, Daul C, Driz M, et al. FP-LAPW investigation of electronic structure of TaN and TaC compounds. Comput Mater Sci, 2005, 33: 175–183CrossRefGoogle Scholar
  20. 20.
    Guo Y Q, Yu R H, Zhang R L, et al. Calculation of magnetic properties and analysis of valence electronic structures of LaT 13−xAlx (T = Fe, Co) compounds. J Phys Chem B, 1998, 102: 9–16CrossRefGoogle Scholar
  21. 21.
    Yu S H. Empirical electronic theory of solids and molecules. Chin Sci Bull (in Chinese), 1978, 23: 217–224ADSGoogle Scholar
  22. 22.
    Pauling L. The Nature of the Chemical Bond. New York: Cornell University Press, 1960Google Scholar
  23. 23.
    Xu W D, Zhang R L, Yu R H. Calculation crystal cohesive energy of transition metal compounds. Sci China Ser A (in Chinese), 1988, 3: 323–329Google Scholar
  24. 24.
    Liu Z L. Valence Structures of Alloys and Composition Design (in Chinese). Beijing: Science Press, 2002, 68–220Google Scholar
  25. 25.
    Zhang R L. Empirical Electronic Theory of Solids and Molecules (in Chinese). Changchun: Jilin Science and Technology Press, 1993, 230–270Google Scholar
  26. 26.
    Li P J, Xiong Y H, Liu S X. Electron theory study on mechanism of action of cobalt in Fe-Co-Cr based high-alloy steel. Chin Sci Bull, 2002, 47(22): 1690–1692Google Scholar
  27. 27.
    Fan C Z, Sun L L, Zhang J, et al. Valence electronic structure and cohesive property of a binary noble metal nitride. Chin Sci Bull, 2005, 50(11): 1079–1082CrossRefGoogle Scholar
  28. 28.
    Kurmaev E Z, Moewes A, Pchelkina Z V, et al. X-ray transitions for studying the electronic structure of 5d metals. Phys Rev B, 2001, 64: 073108-1–2Google Scholar
  29. 29.
    Nie H B, Xu S Y, Wang S J, et al. Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering. Appl Phys A, 2001, 73: 229–232ADSCrossRefGoogle Scholar
  30. 30.
    Levine B F. Bond susceptibilities and ionicities in complex crystal structures. J Chem Phys, 1973, 59: 1463–1478CrossRefADSGoogle Scholar

Copyright information

© Science in China Press 2007

Authors and Affiliations

  • Fan ChangZeng 
    • 1
    • 2
  • Sun LiLing 
    • 2
  • Wei ZunJie 
    • 1
  • Ma Mingzhen 
    • 3
  • Liu RiPing 
    • 3
  • Zeng SongYan 
    • 1
  • Wang WenKui 
    • 3
  1. 1.Department of Materials Science and EngineeringHarbin Institute of TechnologyHarbinChina
  2. 2.National Laboratory for Superconductivity, Institute of PhysicsChinese Academy of SciencesBeijingChina
  3. 3.National Key Laboratory of Metastable Materials Science and TechnologyYanshan UniversityQinhuangdaoChina

Personalised recommendations