Nonvolatile memristor based on heterostructure of 2D room-temperature ferroelectric α-In2Se3 and WSe2
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Two-dimensional (2D) ferroelectricity is considered to have significant potential for information storage in the future. Semiconducting ferroelectrics that are stable at room temperature afford many possibilities for the assembly of various high-performance heterostructures and fabricating multifuntional devices. Herein, we report the synthesis of a stable van der Waals (vdW) single-crystal semiconductor α-In2Se3. Piezoresponse force microscopy (PFM) measurements demonstrated the out-of-plane ferroelectricity in ∼15 layers α-In2Se3 at room temperature. Both ferroelectric domains with opposite polarization and the tested amplitude and phase curve proved that this semiconductor exhibits hysteresis behavior during polarization. In the α-In2Se3/WSe2 vertical heterostructure device, the switchable diode effect and nonvolatile memory phenomenon showed a high on/off ratio and a small switching voltage. The distinct resistance switches were further analyzed by band alignment of the heterostructure under different polarizations by first principle calculations. Nonvolatile memory based on vdW ferroelectric heterostructure could provide a novel platform for developing 2D room-temperature ferroelectrics in information storage.
Keywords2D ferroelectricity α-In2Se3 heterostructure nonvolatile memristor polarization
This work was supported by National Natural Science Foundation of China (Grant Nos. 61622406, 61571415), National Key Research and Development Program of China (Grant Nos. 2017YFA0207500, 2016YFB0700700), and Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB30000000).