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Physical mechanism of performance adjustment in selective buried oxide n-MOSFETs

  • Qin Huang
  • Renhua Liu
  • Yabin SunEmail author
  • Xiaojin LiEmail author
  • Yanling Shi
  • Changfeng Wang
  • Duanduan Liao
  • Ming Tian
Letter

Notes

Acknowledgements

This work was supported by National Science and Technology Major Project (Grant No. 2016ZX02301003), National Natural Science Foundation of China (Grant Nos. 61574056, 61704056), Shanghai Sailing Program (Grant No. YF1404700), and Science and Technology Commission of Shanghai Municipality (Grant No. 14DZ2260800).

References

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Copyright information

© Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  • Qin Huang
    • 1
  • Renhua Liu
    • 1
  • Yabin Sun
    • 1
    Email author
  • Xiaojin Li
    • 1
    Email author
  • Yanling Shi
    • 1
  • Changfeng Wang
    • 2
  • Duanduan Liao
    • 2
  • Ming Tian
    • 2
  1. 1.Key Laboratory of Multidimensional Information Processing, Department of Electrical EngineeringEast China Normal UniversityShanghaiChina
  2. 2.Shanghai Huali Microelectronics CorporationShanghaiChina

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