A physical channel-potential and drain-current model for asymmetric dual-gate a-IGZO TFTs
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This work was supported by National Natural Science Foundation of China (Grant No. 61274085), and Science and Technology Planning Project of Guangdong Province (Grant No. 2015B090909001).
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- 5.Qin T, Huang S X, Liao C W, et al. Analytical channel potential model of amorphous InGaZnO thin-film transistors with synchronized symmetric dual-gate (in Chinese). Acta Phys Sin, 2017, 66: 097101Google Scholar
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