A physical channel-potential and drain-current model for asymmetric dual-gate a-IGZO TFTs

  • Minxi Cai
  • Ruohe YaoEmail author



This work was supported by National Natural Science Foundation of China (Grant No. 61274085), and Science and Technology Planning Project of Guangdong Province (Grant No. 2015B090909001).

Supplementary material

11432_2018_9659_MOESM1_ESM.pdf (737 kb)
A physical channel-potential and drain-current model for asymmetric dual-gate a-IGZO TFTs


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Copyright information

© Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  1. 1.School of Electronic and Information EngineeringSouth China University of TechnologyGuangzhouChina

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