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Comparison of the dark signal degradation induced by Gamma ray, proton, and neutron radiation in pinned photodiode CMOS image sensors

  • Zujun WangEmail author
  • Yuanyuan Xue
  • Wei ChenEmail author
  • Rui Xu
  • Hao Ning
  • Baoping He
  • Zhibin Yao
  • Minbo Liu
  • Jiangkun Sheng
  • Wuying Ma
  • Guantao Dong
Letter
  • 7 Downloads

Notes

Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 11875223, 11805155, 11690043), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDA15015000), the Innovation Foundation of Radiation Application (Grant No. KFZC2018040201), and the Foundation of State Key Laboratory of China (Grant No. SKLIPR1803, 1610).

Supplementary material

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References

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Copyright information

© Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  • Zujun Wang
    • 1
    • 2
    Email author
  • Yuanyuan Xue
    • 1
  • Wei Chen
    • 1
    Email author
  • Rui Xu
    • 2
  • Hao Ning
    • 2
  • Baoping He
    • 1
  • Zhibin Yao
    • 1
  • Minbo Liu
    • 1
  • Jiangkun Sheng
    • 1
  • Wuying Ma
    • 1
  • Guantao Dong
    • 1
  1. 1.State Key Laboratory of Intense Pulsed Irradiation Simulation and EffectNorthwest Institute of Nuclear TechnologyXi’anChina
  2. 2.School of Materials Science and EngineeringXiangtan UniversityHunanChina

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