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Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor

  • Jinxin Zhang
  • Hongxia GuoEmail author
  • Fengqi Zhang
  • Chaohui He
  • Pei Li
  • Yunyi Yan
  • Hui Wang
  • Linxia Zhang
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Notes

Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 61704127, 61574171, 11175138). Thanks for the Institute of Microelectronics, Tsinghua University. Thanks for China Institute of Atomic Energy.

References

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    Fleetwood Z E, Lourenco N E, Ildefonso A, et al. Using TCAD modeling to compare heavy-ion and laserinduced single event transients in SiGe HBTs. IEEE Trans Nucl Sci, 2017, 64: 398–405CrossRefGoogle Scholar
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    Zhang J X, He C H, Guo H X, et al. 3-D simulation study of single event effects of SiGe heterojunction bipolar transistor in extreme environment. Microelectron Reliab, 2015, 55: 1180–1186CrossRefGoogle Scholar

Copyright information

© Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2017

Authors and Affiliations

  • Jinxin Zhang
    • 1
  • Hongxia Guo
    • 2
    • 4
    Email author
  • Fengqi Zhang
    • 4
  • Chaohui He
    • 3
  • Pei Li
    • 3
  • Yunyi Yan
    • 1
  • Hui Wang
    • 1
  • Linxia Zhang
    • 1
  1. 1.School of Aerospace Science and TechnologyXidian UniversityXi’anChina
  2. 2.Xinjiang Technical Institute of Physics & ChemistryChinese Academy of SciencesUrumqiChina
  3. 3.School of Energy and Power EngineeringXi’an Jiaotong UniversityXi’anChina
  4. 4.Northwest Institution of Nuclear TechnologyXi’anChina

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