Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor
- 50 Downloads
This work was supported by National Natural Science Foundation of China (Grant Nos. 61704127, 61574171, 11175138). Thanks for the Institute of Microelectronics, Tsinghua University. Thanks for China Institute of Atomic Energy.
- 1.Cressler J D, Niu G F. Silicon-Germanium Heterojunction Bipolar Transistors. Boston: Artech House, 2003. 22–30Google Scholar
- 3.Xu Z Y, Niu G F, Luo L, et al. Charge collection and SEU in SiGe HBT current mode logic operating at cryogenic temperatures. IEEE Trans Nucl Sci, 2010, 57: 3206–3211Google Scholar
- 4.Varadharajaperumal M. 3D simulation of SEU in SiGe HBTS and radiation hardening by design. Dissertation for Ph.D. Degree. Alabama: Auburn University, 2010. 89–93Google Scholar
© Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2017