Science China Information Sciences

, Volume 53, Issue 4, pp 878–884 | Cite as

Frequency dispersion effect and parameters extraction method for novel HfO2 as gate dielectric

  • HongXia Liu
  • QianWei Kuang
  • SuZhen Luan
  • Aaron Zhao
  • Sai Tallavarjula
Research Papers

Abstract

The electric characteristic of MOS capacitor with HfO2/SiO2/p-Si grown by ALCVD (atom layer chemical vapor deposition) is investigated. The C-V curves show that the accumulation capacitances take on the frequency dispersion at high frequency. For MOS capacitor with ultra thin HfO2/SiO2 gate stack, different fabrication processes and measurement equipment will cause parasitic effect. Here an equivalent circuit model that can eliminate the frequency dispersion effect is proposed. The C-V characteristics curve at high frequency shows some distortion because of the bulk defects and the interface states. This paper discusses the distortion of the high frequency MOS C-V characteristic curve. A data processing method is advanced and interface trap density distribution in the band gap is presented. By comparing the ideal C-V curve with the experimental C-V curve, the typical electrical parameters of MOS capacitor are extracted, including the shift of flat-band voltage, the oxide charges and the density of interface traps at the SiO2/Si interface.

Keywords

high k gate dielectric HfO2 frequency dispersion equivalent circuit model two-frequency C-V measurement parameters extraction 

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Copyright information

© Science China Press and Springer-Verlag Berlin Heidelberg 2010

Authors and Affiliations

  • HongXia Liu
    • 1
  • QianWei Kuang
    • 1
  • SuZhen Luan
    • 1
  • Aaron Zhao
    • 2
  • Sai Tallavarjula
    • 2
  1. 1.Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and DevicesSchool of Microelectronics, Xidian UniversityXi’anChina
  2. 2.Applied Materials IncSunnyvaleUSA

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