Science in China Series F: Information Sciences

, Volume 52, Issue 10, pp 1947–1952

Field emission properties of amorphous GaN ultrathin films fabricated by pulsed laser deposition

  • FengYing Wang
  • RuZhi Wang
  • Wei Zhao
  • XueMei Song
  • Bo Wang
  • Hui Yan
Article

DOI: 10.1007/s11432-009-0162-1

Cite this article as:
Wang, F., Wang, R., Zhao, W. et al. Sci. China Ser. F-Inf. Sci. (2009) 52: 1947. doi:10.1007/s11432-009-0162-1

Abstract

Amorphous gallium nitride (a-GaN) films with thicknesses of 5 and 300 nm are deposited on n-Si (100) substrates by pulsed laser deposition (PLD), and their field emission (FE) properties are studied. It shows that compared with thicker (300 nm) a-GaN film, better FE performance is obtained on ultrathin (5 nm) a-GaN film with a threshold field of 0.78 V/µm, which is the lowest value ever reported. Furthermore, the current density reaches 42 mA/cm2 when the applied field is 3.72 V/µm. These experimental results unambiguously confirm Binh’s theoretical analysis (Binh et al. Phys Rev Lett, 2000, 85(4): 864–867) that the FE performance would be prominently enhanced with the coating of an ultra-thin wide band-gap semiconductor film.

Keywords

field emission amorphous gallium nitride (a-GaN) pulsed laser deposition (PLD) work function 

Copyright information

© Science in China Press and Springer Berlin Heidelberg 2009

Authors and Affiliations

  • FengYing Wang
    • 1
  • RuZhi Wang
    • 1
  • Wei Zhao
    • 1
  • XueMei Song
    • 1
  • Bo Wang
    • 1
  • Hui Yan
    • 1
  1. 1.Laboratory of Thin Film, College of Materials Science and EngineeringBeijing University of TechnologyBeijingChina

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