Metallurgical challenges in microelectronic 3D IC packaging technology for future consumer electronic products
- First Online:
- 627 Downloads
Metallurgical challenges in controlling the microstructural stability of Cu and solder microbumps in 3D IC packaging technology are discussed. Using uni-directional 〈111〉 oriented nanotwinned Cu, the controlled growth of oriented Cu66n5 on the nanotwinned Cu and its transformation to Cu3Sn without Kirkendall voids have been achieved. In order to join a stack of Si chips into a 3D device, multiple reflows of solder microbumps may be required; we consider localized heating to do so by the use of self-sustained explosive reaction in multi-layered Al/Ni thin films of nano thickness. It avoids re-melting of those solder joints which have been formed already in the 3D stacking structure.
Keywords3D IC packaging microbump localized heating
Unable to display preview. Download preview PDF.
- 1.Lin J C, Chiou W C, Yang K F, et al. High density 3D integration using CMOS foundry technologies for 28 nm node and beyond. IEEE International Electron Devices Meeting (IEDM), 2010. 2.1.1–2.1.4Google Scholar
- 2.Yu A, Lau J H, Ho S W, et al. Study of 15 μm pitch solder microbumps for 3D IC integration. Electronic Components and Technology Conference (ECTC), 2009, 59. 6–10Google Scholar
- 5.Tian T, Chen K, Kunz M, et al. Preferred orientation of 30 μm fine pitch Sn2.5Ag micro-bumps studied by synchrotron polychromatic x-ray Laue microdiffraction. Electronic Components and Technology Conference (ECTC), 2012, 62. 882–885Google Scholar
- 6.Tu K N, Gusak A M. Kinetics in Nanoscale Materials. New York: Wiley, 2013Google Scholar
- 16.Juang J Y, Lu S T, Zhan C J, et al. Development of 30 μm pitch Cu/Ni/SnAg micro-bump-bonded chip-on-chip interconnections. Proc. IEEE IMPACT, 2010. 1–4Google Scholar
- 22.Weihs T P. Handbooks of Thin Film Process Technology. Bristol, UK: Institute of Physics, 1998Google Scholar