Science China Technological Sciences

, Volume 56, Issue 7, pp 1740–1748 | Cite as

Metallurgical challenges in microelectronic 3D IC packaging technology for future consumer electronic products

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Abstract

Metallurgical challenges in controlling the microstructural stability of Cu and solder microbumps in 3D IC packaging technology are discussed. Using uni-directional 〈111〉 oriented nanotwinned Cu, the controlled growth of oriented Cu66n5 on the nanotwinned Cu and its transformation to Cu3Sn without Kirkendall voids have been achieved. In order to join a stack of Si chips into a 3D device, multiple reflows of solder microbumps may be required; we consider localized heating to do so by the use of self-sustained explosive reaction in multi-layered Al/Ni thin films of nano thickness. It avoids re-melting of those solder joints which have been formed already in the 3D stacking structure.

Keywords

3D IC packaging microbump localized heating 
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© Science China Press and Springer-Verlag Berlin Heidelberg 2013

Authors and Affiliations

  1. 1.Deptment of Mechanical and Biomedical EngineeringCity University of Hong KongKowloon Tong, KowloonHong Kong
  2. 2.Deptment of Materials Science and EngineeringUniversity of California at Los AngelesLos AngelesUSA

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