Science in China Series E: Technological Sciences

, Volume 52, Issue 9, pp 2758–2761

Improved GaN grown on Si(111) substrate using ammonia flow modulation on SiNx mask layer by MOCVD

  • NaiSen Yu
  • Yong Wang
  • Hui Wang
  • KaiWei Ng
  • KeiMay Lau
Article

Abstract

In this paper, 1 μm n-GaN was grown by using varied and fixed ammonia flow (NH3) on SiNx mask layer on Si(111) substrate using metal organic chemical vapor deposition (MOCVD). In-situ optical reflectivity traces of GaN growth show that the three- to two-dimensional process has been prolonged by using varied ammonia flow on SiNx mask layer method compared with that grown by fixing ammonia flow. Structural and optical properties were characterized by high-resolution X-ray diffraction and photoluminescence, and compared with the sample grown by fixing ammonia flow, GaN grown using the varied ammonia flow on SiNx mask layer showed better structure and optical quality. It was assumed that the low NH3 flow in the initial growth stage considerably increased the GaN island density on the nano-porous SiNx layer by enhancing vertical growth. Lateral growth was significantly favored by high NH3 flow in the subsequent step. As a result, the improved crystal and optical quality was achieved utilizing NH3 flow modulation for GaN buffer growth on Si(111) substrate.

Keywords

GaN epilayer MOCVD NH3 modulation 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Xie Z L, Zhang R, Jiang R L, et al. Structural and optical characteristics of AlxGa1xN/AlN superlattice. Sci China Ser E-Tech Sci, 2009, 52(2): 332–335CrossRefGoogle Scholar
  2. 2.
    Kai C, Degroote M L, Daele S, et al. Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers. J Elec Mater, 2006, 35(4): 592–598CrossRefGoogle Scholar
  3. 3.
    Ishikawa H, Zhao G Y, Nakada N, et al. GaN on Si substrate with AlGaN/AlN intermediate layer. Jpn J Appl Phys, 1999, 38: 492–494CrossRefGoogle Scholar
  4. 4.
    Kuo C H, Chang S J, Su Y K, et al. Nitride-based blue LEDs with GaN-SiN double buffer layers. Solid State Electron, 2003, 47(2): 2019–2022CrossRefGoogle Scholar
  5. 5.
    Tu R C, Chuo C C, Pan S M, et al. Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers. Appl Phys Lett, 2003, 83(17): 3608–3610CrossRefGoogle Scholar
  6. 6.
    Marchand H, Ibbetson J P, Fini P T, et al. Mechanisms of lateral epitaxial overgrowth of gallium nitride by metal organic chemical vapor deposition. J Cryst Growth, 1998, 195(5): 328–332CrossRefGoogle Scholar
  7. 7.
    Lee K J, Shin E H, Lim K Y. Reduction of dislocations in GaN epilayers grown on Si(111) substrate using SixNy inserting layer. Appl Phys Lett, 2004, 8(9): 1502–1504CrossRefGoogle Scholar
  8. 8.
    Park S E, Lim S M, Lee C R, et al. Influence of SiN buffer layer in GaN epilayers. J Cryst Growth, 2003, 249(1–2): 487–491CrossRefGoogle Scholar
  9. 9.
    Heying B, Wu X H, Keller S, et al. Role of threading dislocation structure on the X-ray diffraction peak widths in epitaxial GaN films. Appl Phys Lett, 1996, 68(3): 643–645CrossRefGoogle Scholar
  10. 10.
    Tarsa E J, Heying B, Wu X H, et al. Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy. J Appl Phys, 1997, (82): 5472–5475Google Scholar

Copyright information

© Science in China Press and Springer-Verlag GmbH 2009

Authors and Affiliations

  • NaiSen Yu
    • 1
  • Yong Wang
    • 2
  • Hui Wang
    • 2
  • KaiWei Ng
    • 2
  • KeiMay Lau
    • 2
  1. 1.Institute of Optoelectronic Technology, School of Mathematics and PhysicsDalian Nationalities UniversityDalianChina
  2. 2.Department of Electrical and Electronic EngineeringHong Kong University of Science & TechnologyKowloon, Hong KongChina

Personalised recommendations