Wireless Personal Communications

, Volume 103, Issue 3, pp 2679–2692 | Cite as

Highly Linear High-Frequency Low-Noise Amplifier Design at ISM Band

  • Farhad Bahadori-Jahromi
  • Seyyed Jafar Zareian-Jahromi


A highly linear high-frequency low-noise amplifier is one of the important components in telecommunication receivers. The purpose of making such amplifiers is to amplify received signal from transmitter (antenna) at an acceptable level. A narrow band highly linear low-noise amplifier was studied and designed in this paper. A BFP720 bipolar transistor from Infineon Company associated with ADS software was used. Low-noise amplifier was initially designed and simulated and its results were obtained. Lumped elements of inductor and capacitor were used in the design of input and output matching network of this circuit, and two amplifier circuits were then designed and some techniques and methods proposed to improve its performance.


Linear amplifier Low-noise amplifier High-frequency ADS software ISM band 



  1. 1.
    Pozar, D. M., & Banaei, A. (2009). Microwave engineering. Tehran: Center for Academic Publishing.Google Scholar
  2. 2.
    Yilmaz, M. (2015). A two stage x-band low noise amplifier optimized for minimum noise application. A thesis submitted to the Department of Electrical and Electronics Engineering and the Graduate School of Engineering and Science of Bilkent University in partial fulfillment of the requirements for the degree of master of science.Google Scholar
  3. 3.
    Hameed, A., & Oudah, A. (2015). Improved design of low noise amplifier. International Journal of Multimedia and Ubiquitous Engineering, 10(1), 255–264.CrossRefGoogle Scholar
  4. 4.
    Corral, C. A. (2016). Design of microwave transistor amplifiers with optimum cascaded gain and noise. IET Microwaves, Antennas and Propagation, 10(11), 1196–1203.CrossRefGoogle Scholar
  5. 5.
    Ahmed, M., Shoaib, N., & Mahmood, I. (2011). Design, analysis and optimization of multistage LNA at KU-band. Journal of Space Technology, 1(1), 1–95.Google Scholar
  6. 6.
    Khan, R. M. A., & Zaheer, S. (2012). Design and implementation of a 7–8 GHz low-noise amplifier. ITN, Linkoping University. Norkoping 65.Google Scholar
  7. 7.
    Streetman, B. G., & Roeintan, G. H. (2013). Physical electronics. Tehran: Tehran University of Science and Technology Press Center.Google Scholar
  8. 8.
    Abbasi, M. M., & Jabbar, M. A. (2012). Design and performance analysis of low-noise amplifier with band-pass filter for 2.4–2.5 GHz. Department of Science and Technology Institutionen för teknik och naturvetenskap Linköping University (p. 12).Google Scholar
  9. 9.
    Patel, S. K., Khan, S. A., & Kumar, S. (2013). An unconditionally stable front end low noise amplifier design for 24 GHz ISM band (0975-8887). International Journal of Computer Applications, 71(22), 34.Google Scholar
  10. 10.
    Yang, K., Keogh, B., & Ammann, M. J. (2014). Investigation of radio frequency low noise amplifier design using source pull techniques at 2.4 GHz. ISSC 2014/CIICT 2014, Limerick, June 26–27.Google Scholar
  11. 11.
    Roger R04350B data sheet. Accessed 12 March 2014.
  12. 12.
    Infineon Technologies, BFP720, low noise Silicon Germanium bipolar transistor. Data Sheet, Revision 1.1.2012-10-19.
  13. 13.
    Bandla, A. (2015). Highly linear 2.45 GHz low-noise amplifier design. This report is subjected to a master thesis for requirement of master degree in wireless networks and electronics at ITN, Linköping University, Norrköping 2015-06-17.Google Scholar

Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  • Farhad Bahadori-Jahromi
    • 1
  • Seyyed Jafar Zareian-Jahromi
    • 1
  1. 1.Department of Electrical and Computer Engineering, Fasa BranchIslamic Azad UniversityFasaIran

Personalised recommendations