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Design and Simulations of an Energy Harvesting Capable CMOS Pixel for Implantable Retinal Prosthesis

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A new pixel is designed with the capability of imaging and energy harvesting for the retinal prosthesis implant in 0.18 µm standard Complementary Metal Oxide Semiconductor technology. The pixel conversion gain and dynamic range, are 2.05 \(\upmu{\text{V}}/{\text{e}}^{ - }\) and 63.2 dB. The power consumption 53.12 pW per pixel while energy harvesting performance is 3.87 nW in 60 klx of illuminance per pixel. These results have been obtained using post layout simulation. In the proposed pixel structure, the high power production capability in energy harvesting mode covers the demanded energy by using all available p-n junction photo generated currents.

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Funding was provided by Iran University of Science and Technology.

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Correspondence to Iman Ansaripour.

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Ansaripour, I., Karami, M.A. Design and Simulations of an Energy Harvesting Capable CMOS Pixel for Implantable Retinal Prosthesis. Sens Imaging 18, 18 (2017). https://doi.org/10.1007/s11220-017-0171-x

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  • Image sensor
  • Energy harvesting
  • Implantable retinal prosthesis